Allicdata Part #: | 497-5455-ND |
Manufacturer Part#: |
SD1275 |
Price: | $ 40.14 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | TRANS NPN RF MICROWAVE VHF M135 |
More Detail: | RF Transistor NPN 16V 8A 70W Chassis, Stud Mount ... |
DataSheet: | SD1275 Datasheet/PDF |
Quantity: | 22 |
1 +: | $ 36.48960 |
10 +: | $ 34.27520 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 16V |
Frequency - Transition: | -- |
Noise Figure (dB Typ @ f): | -- |
Gain: | 9dB |
Power - Max: | 70W |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 20 @ 250mA, 5V |
Current - Collector (Ic) (Max): | 8A |
Operating Temperature: | 200°C (TJ) |
Mounting Type: | Chassis, Stud Mount |
Package / Case: | M135 |
Supplier Device Package: | M135 |
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The SD1275 is a bipolar junction transistor (BJT) that operates in the radio frequency (RF) spectrum, specifically the 9gHz to 12.7 GHz range. The SD1275 is designed to offer low noise figures coupled with excellent linearity. This makes it an ideal choice for power amplification, as well as other forms of active circuitry.
In terms of its applications, the SD1275 is typically found in communication systems such as globally interoperable microwave access (GIMA), cellular base transceiver stations, and radar. It has also been used in many mobile and fixed amplifying applications such as satellite communications systems, deep space communication systems, and high-speed modems.
The SD1275 is a three-lead BJT that incorporates a collector-emitter (CE) link. The CE link is formed from metal-oxide-semiconductor (MOS) layers, with transistors built on top of each other. The transistor’s first-level low noise performance is due to this MOS layer construction, with active layers that can be configured to produce optimum gain and noise performance.
The SD1275 also contains an input stage (E-B connection) that ensures the transistor operates under RF conditions. This stage is designed to attenuate the input signal to reduce noise and distortion, while ensuring peak gain and efficiency. To further reduce noise and distortion, the SD1275 also has a two-level gridded emitter whose design ensures low cross-talk and low spurious responses.
The SD1275 contains a PNP transistor, but it also has an NPN transistor within its design which can be used as an output driver stage. This allows it to act as both a linear amplifier and a gate drive amplifier. It also has a low voltage control that can be used to adjust the gain. All of these features make the SD1275 an ideal component for power amplification, and other active circuitry.
In summary, the SD1275 is a bipolar junction transistor (BJT) that operates in the radio frequency (RF) spectrum. It is designed to offer low-noise figures and excellent linearity, making it an ideal choice for power amplification, and other forms of active circuitry. It is typically used in the telecommunications industry and satellite communications systems, and is equipped with features such as an input stage, two-level gridded emitter, and low voltage control. All these features make the SD1275 a reliable and highly-functional component.
The specific data is subject to PDF, and the above content is for reference
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