Series:	--
Packaging:	Bulk
Part Status:	Obsolete
Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	45V
Frequency - Transition:	960MHz ~ 1.215GHz
Noise Figure (dB Typ @ f):	--
Gain:	9.5dB
Power - Max:	21.9W
DC Current Gain (hFE) (Min) @ Ic, Vce:	--
Current - Collector (Ic) (Max):	1A
Operating Temperature:	200°C (TJ)
Mounting Type:	Chassis Mount
Package / Case:	M115
Supplier Device Package:	M115

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Introduction to SD1526-01 Application Field and Working Principle

The SD1526-01 is a high-performance NPN bipolar junction transistor (BJT) with excellent RF power handling capabilities. It is specifically designed for RF applications where good linearity, low noise, and high power capability are required. The SD1526-01 can be used in a wide range of RF applications, such as RF power amplifiers, oscillators, radio receivers, and transmitters. This article will describe the application fields and working principles of the SD1526-01.

Application Field

The SD1526-01 is a high-performance high-frequency transistor, which is especially suitable for use in RF applications. Specifically, it is used in radio receivers and transmitters, RF power amplifiers, oscillators, and other similar applications. It has a high power handling capability of up to 1.2W at 5.8GHz, which makes it suitable for applications in the sub-1GHz–5GHz frequency range. Additionally, its excellent linearity and low noise characteristics make it suitable for use in applications where high-fidelity signal reproduction is required.

Working Principle

The SD1526-01 is a NPN bipolar junction transistor (BJT). It is made up of three main parts: the collector, the base, and the emitter. The base is the control element for the transistor, and it is forward biased when a voltage is applied to it. This causes the base to become conducting, thereby allowing a current to flow between the collector and emitter. The current flows in the opposite direction to the voltage applied to the base, resulting in an amplification of the signal as it passes through the transistor. The collector is the output element of the transistor, and it is also connected to the emitter. The collector-emitter current can be controlled by changing the current through the base. This is referred to as the voltage gain of the transistor, and it is the amount of current flowing through the collector-emitter terminals in response to an applied voltage at the base.The SD1526-01 is designed to provide a high voltage gain while maintaining a low noise floor. It also has excellent power handling capabilities and can operate over a wide range of frequencies, making it ideal for use in RF applications. It also has a wide RF power gain range, which makes it suitable for use in power amplifiers or oscillators.

Conclusion

The SD1526-01 is a high-performance NPN bipolar junction transistor (BJT) with excellent RF power handling capabilities. It is specifically designed for RF applications where good linearity, low noise, and high power capability are required. The SD1526-01 can be used in a wide range of RF applications, such as RF power amplifiers, oscillators, radio receivers, and transmitters. It has a high voltage gain, a low noise floor, and excellent power handling capabilities. Additionally, it can operate over a wide range of frequencies, making it ideal for use in RF applications.

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