SD1731

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The SD1731 is a high performance NPN silicon bipolar RF transistor. This device is designed for use in broadband amplifiers, low noise amplifiers, and high gain pre-driver stages for general purpose RF and microwave applications. The SD1731 is capable of supporting a wide range of frequencies ranging from DC to 4 GHz with peak gain of 17 dB. It has an excellent linearity performance, with a typical third-order intercept point (IP3) of 32 dBm and an associated gain compression point (GCP) of 17 dBm.

The SD1731 provides high efficiency and stability, with a typical power added efficiency (PAE) of 36%, allowing for greater power in less board space. Additionally, the device features low thermal resistance and low intermodulation distortion, and is capable of producing high saturation power levels up to 6.7W. The device is also optimized for wideband performance, with a minimum bandwidth of 1.1 GHz and a gain flatness of ±1.5dB over the entire frequency range.

The SD1731 is a medium power device with a maximum collector current of 500 mA and a maximum collector-emitter voltage of 24V. It also features low operating current requirements of 40 mA at a collector-emitter voltage of 12V. The SD1731 has a maximum collector power dissipation of 8.3 W and a maximum junction temperature of 200°C. The device is rated for a typical power gain of 16 dB with a typcal noise figure of 4.5dB.

The SD1731 is a versatile transistor that can be used in a variety of RF and microwave applications. It is suitable for applications such as broadband amplifiers, low noise amplifiers, and driver stages for various wireless applications. As an example, one can use the SD1731 as a high gain pre-driver stage in a Wi-Fi application. The device can be used in applications that require high gain and efficiency with good output power levels. Additionally, the SD1731 is often used in radio-frequency ranges of 1 GHz and lower.

The SD1731 utilizes a standard NPN silicon bipolar structure, meaning it is composed of a three layer semiconductor device. The base layer consists of the emitter, while the collector and the substrate form the other two layers. This type of architecture offers a number of advantages, such as low noise, excellent linearity, and high gain. Additionally, the bipolar construction of the SD1731 allows for low operating current requirements, making it ideal for low power applications.

The working principle of the SD1731 involves the flow of electrons between the collector and the emitter terminal. A current is created by the electrons’ movement and this current flows between the terminals when the base terminal is provided with a bias voltage. This current is then used to amplify an input signal to produce an output signal. The gain of the transistor is determined by the ratio of the input to output current. The current gain of the SD1731 is typically 15.

The SD1731 transistor is an ideal choice for a wide range of RF and microwave applications due to its excellent performance and high efficiency. It features a low operating current requirement, a maximum collector power dissipate of 8.3W, and a maximum junction temperature of 200°C. Additionally, its small size and high gain make it an ideal choice for applications that require a small footprint or high gain. The SD1731 is an excellent choice for high gain pre-driver stages, amplifier stages, and other general purpose RF and microwave applications.

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