SD1853-02H Allicdata Electronics
Allicdata Part #:

SD1853-02H-ND

Manufacturer Part#:

SD1853-02H

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: RF POWER TRANSISTOR
More Detail: RF Transistor
DataSheet: SD1853-02H datasheetSD1853-02H Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Obsolete
Description

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SD1853-02H Application Field and Working Principle

SD1853-02H is a kind of RF transistor which belongs to Bipolar Junction Transistor (BJT). It is designed for high frequency communication and switching applications, operating at 100V and 12A. In this article, the application field and working principle of SD1853-02H are introduced in detail.

Application Field

The SD1853-02H is widely used in different electronic devices, including:

  • Mobile phones
  • Data communication systems
  • High frequency amplifiers
  • Wireless telecommunication equipment
  • Radar detection systems
  • Microwave systems
  • Industrial machines

The SD1853-02H\'s performance in these application is excellent due to its features which make it suitable to work in high frequency applications. These features include but not limited to: high breakdown voltage, low input capacitances, high switching speed and high gain. The SD1853-02H also provides good protection for the circuitry due to its low noise and excellent thermal stability.

Working Principle

The SD1853-02H is a multi-stage, uni-polar, NPN bipolar junction transistor (BJT). It works through the controlling of the flow of current from the Emitter to the Collector. This flow is regulated by the Base voltage with the direct exception of the flow through the Emitter-Base junction, which is near constant.

As current passes through the Base, it is amplified and channeled through the Emitter to the Collector. This amplification of the Base current is done through the Transconductance gain. The operation of the SD1853-02H occurs at relatively high frequencies due to its low Base-Collector capacitance.

The SD1853-02H is constructed to dissipate heat easily, enabling it to sustain high temperature and power dissipation levels. In order to achieve this, the internal structure is designed to facilitate the flow of heat away from the Emitter and Collector regions. This structure also helps to minimize the parasitic effects and maximize the power dissipation.

Conclusion

The SD1853-02H is a bipolar junction transistor (BJT) designed for high frequency communication and switching applications. Its low Base-Collector capacitance and high Transconductance gain make it an ideal choice for applications in mobile phones, data communication systems and radar detection systems. Its ability to dissipate heat makes it suitable for long-term use and its low noise and excellent thermal stability protects the circuitry from harm.

The specific data is subject to PDF, and the above content is for reference

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