SD8268-21H

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SD8268-21H is a type of Surface Mount Bipolar RF Transistor specifically designed for use in a wide variety of radio frequency (RF) applications. It is ideal for use in both linear applications such as amplifying, oscillating and signal generation as well as switching applications. As such, this transistor is found in commercial and direct broadcast satellite, wireless telephony, wireless data transmission and radar systems.

This NPN, double-diffused transistor has a high frequency power handling capability and typically operates with a supply voltage in the range of 3.3 to 4.5V DC. The transistor is available in the space-saving Surface Mounted Device (SMD) package or the conventional dual-in-line package. It is particularly suitable for high power gain applications.

The pole shape of the current-voltage characteristic of the SD8268-21H transistor implies that it is suitable for use in switched-mode topologies, as it provides very low on-state resistance and is able to handle higher currents than a traditional bipolar transistor. It also exhibits a very low frequency switch-off time, allowing signals to pass through more quickly. Additionally, the transistor is able to control currents up to a certain point and is thus suited to linear applications such as signal amplification.

The working principle of the SD8268-21H is based on the same principle as other transistors, meaning that current flows from the collector terminal to the emitter terminal, when the base terminal is given a positive voltage signal. When the transistor is in its off-state, there will be no current flow between the collector and emitter terminals, regardless of the base input. When the transistor is switched on, current will start flowing freely between the collector and emitter terminals, in proportion to the voltage applied across it.

The maximum power dissipation of the SD8268-21H is the important factor in defining its power handling capability and is typically 1W. The gain of the transistor is also taken into consideration in order to calculate its output power. At a given value of frequency, the gain will be a function of the magnitude of the signal delivered at the collector to emitter terminals as well as the amount of base current applied.

The transistor is offered in a wide range of packages, and is also available in a variety of temperature thresholds. It is particularly well-suited for applications that require high RF output power, due to its low on-state resistance and high power gain. The device is also able to handle higher frequency signals than traditional transistors, making it particularly attractive for RF applications.

In conclusion, the SD8268-21H is a type of high-frequency, double-diffused NPN bipolar RF transistor which is ideal for use in linear as well as switching applications. It offers a low on-state resistance and high power gain, making it well-suited for high-power gain applications. In addition, it is capable of handling higher frequency signals compared to traditional transistors, making it an attractive choice for RF applications.

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