SDN06464K1BJ1MT-50R

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Memory modules are integral components in computers, with SDN06464K1BJ1MT-50R playing an important role. As a type of random access memory (RAM) module, it typically begins a data access sequence by first receiving a request from a processor or system bus for a specific address on the RAM module. Based on address decoding and decoding logic, the module then determines the particular memory bank accessing. This then determines the address translation or sequencing and RAM access logic needed for that memory bank.

The SDN06464K1BJ1MT-50R is a DRAM (Dynamic Random Access Memory) module that is composed of 9 DRAM chips of 16M*4bit size. It has a wide application field. It can be utilized in the systems like PC, Computer Server, Workstations, and Multi-CPU systems, as well as the peripheral equipment of the systems. In addition to their wide application field, these modules can work under extreme environmental conditions like very high temperature and high humidity.

The working principle is based on the principle of dynamic random access memory, which stores information using two capacitor and one transistor. In terms of information storage, it stores information for a certain period of time, which is called the refresh cycle. During the refresh cycle, the memory module refreshes its stored information in the capacitor. This refresh cycle ensures that the contents of the memory module remain reliable over extended periods of time.

The typical SDN06464K1BJ1MT-50R module consists of a row of nine DRAM chips, each of which is 0.5 inch in size and has an access time of 50 nanoseconds. Each single DRAM chip is connected to a standard 8-bit data bus and can hold 16M 4-bit words. The timing signals used are standard Ram timing signals EO, WE, OE, Cs, I/O to read or write the data from the DRAM module.

The SDN06464K1BJ1MT-50R memory module is able to provide the user with high data access rates, low power consumption, and reliable operation over long durations. It makes use of advanced packaging technologies which combine all DRAM chips with a single module that can be mounted to the printed circuit board. This improves the density and cost of memory products and makes DRAM memory modules an ideal solution for high-performance applications.

In addition, the SDN06464K1BJ1MT-50R DRAM module also has the capacity to reduce Refresh Cycle times and thereby increase data performance. It also has a robust architecture that can support varying operating and graphics modes. This supports multiple operating systems, virtual memory functions, and enables efficient utilization of the memory module.

Overall, the SDN06464K1BJ1MT-50R DRAM module is an excellent memory module option for those looking for an all-round package that includes performance, reliability, and cost-effectiveness. It has a wide application field and, due to its advanced packaging technologies and its robust architecture, can provide users with an ideal memory module solution for their applications.

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