SDP8405-011

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Optical Sensors using Phototransistors have applications in many fields, and the SDP8405-011 is no exception. This phototransistor is an innovative and reliable device, designed for environment monitoring and industrial control. It offers exceptional temperature tolerance, accuracy and responsiveness.

The SDP8405-011 is a wideband NPN silicon phototransistor that offers a wide range of benefits. It has an active area size of 1.75mm2, a robust BVceo of 70V, and a maximum collector-emitter voltage of 100V. The SDP8405-011 also has an off-state collector-emitter voltage of 5V and a low noise factor of 2nV/√Hz. Furthermore, it is capable of withstanding temperatures of up to 150°C.

The working principle of the SDP8405-011 is fairly simple. The phototransistor is based on a PN junction, and it is sensitive to light in the wavelength range of 400 to 1100nm. It absorbs photons from the incident light and converts them into electrical current. This current passes through the silicon junction, creating a voltage across it.

The SDP8405-011 is mainly used in environmental monitoring and industrial control. It can detect changes in temperature, humidity and other environmental conditions quickly and accurately. The phototransistor can also be used in sensor systems such as motion detectors, smoke detectors and infrared sensors.

The SDP8405-011 is an ideal choice for environmental control and industrial control applications. Its robust design and reliable performance make it a reliable and cost-effective solution. The phototransistor can monitor changes in temperature, humidity and other environmental conditions accurately and quickly. Moreover, it can be used in a variety of sensor systems, including motion detectors, smoke detectors and infrared sensors.

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