Allicdata Part #: | 475-1449-2-ND |
Manufacturer Part#: |
SFH 325-3/4-Z |
Price: | $ 0.15 |
Product Category: | Sensors, Transducers |
Manufacturer: | OSRAM Opto Semiconductors Inc. |
Short Description: | PHOTOTRANS NPN SIDELED 2SMD |
More Detail: | Phototransistor 980nm Side View 2-SMD, Boomerang |
DataSheet: | SFH 325-3/4-Z Datasheet/PDF |
Quantity: | 1000 |
2000 +: | $ 0.13927 |
6000 +: | $ 0.13430 |
10000 +: | $ 0.13231 |
50000 +: | $ 0.12435 |
Package / Case: | 2-SMD, Boomerang |
Series: | SIDELED |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Collector Emitter Breakdown (Max): | 35V |
Current - Collector (Ic) (Max): | 15mA |
Current - Dark (Id) (Max): | 50nA |
Wavelength: | 980nm |
Viewing Angle: | 120° |
Power - Max: | 165mW |
Mounting Type: | Surface Mount, Right Angle |
Orientation: | Side View |
Operating Temperature: | -40°C ~ 100°C (TA) |
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Optical Sensors - Phototransistors
The SFH 325-3/4-Z is a phototransistor that encompasses both a field-effect transistor (FET) and a light-sensitive diode. A key element of this three-part device is the FET, which amplifies the current of the diode when stimulated by light.
The SFH 325-3/4-Z phototransistor is an active sensor that is housed in a TO-18 package and is mechanism is based around the split-collector design. This design integrates an LED on the same package as the FET, allowing for generation of the biasing current for light conductivity. This means that the light is collected from both the surfaces of the LED and also the top surface of the FET.
The application field for this phototransistor lies in optical data transmission. Its main purpose is to sense incoming light signals and convert them to electrical signals. The SFH 325-3/4-Z can also be used for wireless remote control, infrared communication, data transmission, and signal detection. This phototransistor is the preferred choice for applications due to its higher efficiency and lower cost.
The working principle of the SFH 325-3/4-Z phototransistor is based on the working principle of an optoelectronic device.When light is incident onto the FET, electrons are released from its conduction band. The level of electron emission is proportional to the intensity of the light, and thus can be used to detect changes in light intensity. The degree of electron emission can be regulated by changing the size of the FET’s channel. A higher level of electron emission results in a larger amount of current being conducted.
The FET also performs another important role when it is used as a phototransistor. It acts as a voltage regulator and amplifies the light-induced current collected from the diode. By controlling the current gain and adjusting the internal bias voltage, the phototransistor can achieve its desired sensitivity and linearity.
The SFH 325-3/4-Z phototransistor is considered an ideal light detection device due to its compact size, high sensitivity, and excellent response across a wide range of wavelength. In addition, this device has low-noise operation and is highly reliable, making it suitable for use in data transmission, sensing, and signaling applications.
In conclusion, the SFH 325-3/4-Z phototransistor is a reliable and cost-effective light detection device with a wide range of applications. This device is capable of detecting a range of light levels through its split-collector design and can process these signals with its internal FET. This makes it ideal for a variety of remote control, communication, data transmission, and signal detection applications.
The specific data is subject to PDF, and the above content is for reference
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