SFUI016GJ1AB1TO-C-GS-2A1-STD Allicdata Electronics

SFUI016GJ1AB1TO-C-GS-2A1-STD Memory Cards, Modules

Allicdata Part #:

SFUI016GJ1AB1TO-C-GS-2A1-STD-ND

Manufacturer Part#:

SFUI016GJ1AB1TO-C-GS-2A1-STD

Price: $ 29.83
Product Category:

Memory Cards, Modules

Manufacturer: Swissbit
Short Description: MODULE FLASH NAND MLC 16GB
More Detail: Memory Module FLASH - NAND (MLC) 16GB Module
DataSheet: SFUI016GJ1AB1TO-C-GS-2A1-STD datasheetSFUI016GJ1AB1TO-C-GS-2A1-STD Datasheet/PDF
Quantity: 1000
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: $ 27.11520
Stock 1000Can Ship Immediately
$ 29.83
Specifications
Series: U-45
Part Status: Active
Lead Free Status / RoHS Status: --
Memory Type: FLASH - NAND (MLC)
Memory Size: 16GB
Speed: --
Package / Case: Module
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

SFUI016GJ1AB1TO-C-GS-2A1-STD is an individual memory module that is allocated in the computer for functioning. It belongs to the memory module class due to its core functions and roles. This memory unit has a wide range of application fields and a significant working principle.

The primary application fields of SFUI016GJ1AB1TO-C-GS-2A1-STD memory module include the computers that are built with multiple processors. This type of memory is predominantly used for the distribution of data in computers so that the multiple processors can be utilized efficiently for maximizing their performance. In addition, SFUI016GJ1AB1TO-C-GS-2A1-STD is used for the expansion of RAM or Random Access Memory. This type of memory can also be used for the storage of data in the medium and long term.

The working principle of SFUI016GJ1AB1TO-C-GS-2A1-STD memory module is quite simple. These modules are composed of a thin layer of insulation material, usually polypropylene, that is sandwiched between two conductive layers of metal foil. This metal foil is a special type of metal that conducts electricity. When a voltage is applied to the conductive layers, current will flow through the insulation material and then to the plates.

This results in the generation of a magnetic field and an electrical field between the plates. This is what causes the electrons in the memory module to move around and thus generate the required electrical signals. This electrical field interacts with the metal layer and causes the electrons to move between the two layers. This is what creates the required electrical signal and thus stores the data. from the memory module.

SFUI016GJ1AB1TO-C-GS-2A1-STD memory modules are also known as DRAMs or Dynamic Random Access Memory. This type of memory has faster access times and increases the speed of memory operations. This is because it stores the data in a stable, nonvolatile state, which allows the data to be updated rapidly. The performance of DRAMs is usually higher than that of other types of memory, such as static RAMs or SRAMs, due to its faster access times.

In conclusion, SFUI016GJ1AB1TO-C-GS-2A1-STD is a type of memory module that is used in computers with multi-processor setups. It is used for the distribution of data and for the storage of data in the medium and long term. The working principle of such memory modules is based on the generation of electrical fields between two metal layers that interact with each other and thus produce the required electrical signals. This type of memory module is also known as DRAMs and offers higher performance than traditional memory modules due to its faster access times.

The specific data is subject to PDF, and the above content is for reference

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