SGB20N60ATMA1

Switching Energy:	440µJ (on), 330µJ (off)
Base Part Number:	30N60
Supplier Device Package:	PG-TO263-3
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Test Condition:	400V, 20A, 16 Ohm, 15V
Td (on/off) @ 25°C:	36ns/225ns
Gate Charge:	100nC
Input Type:	Standard
Series:	--
Power - Max:	179W
Vce(on) (Max) @ Vge, Ic:	2.4V @ 15V, 20A
Current - Collector Pulsed (Icm):	80A
Current - Collector (Ic) (Max):	40A
Voltage - Collector Emitter Breakdown (Max):	600V
IGBT Type:	NPT
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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SGB20N60ATMA1 Application Field and Working Principle

The SGB20N60ATMA1 is a part of the SGB family single IGBTs, which are silicon-based semiconductor components with high efficiency and durability. This type of IGBT consists of two terminals, emitter and collector, as well as an additional gate electrode. IGBT\'s are ideal devices to be used in high-speed switching applications that require fast switching speeds, as well as switching in desired applications.

Application Field

The SGB20N60ATMA1 IGBT is a widely used component for applications such as:

• Power converters and inverters for motor control
• Welding equipment and laser power sources
• DC-DC converters
• Lighting applications
• Uninterrupted power supplies
• Electronic ballasts
• AC motor control

In addition to these applications, Complementary Metal Oxide Semiconductor (CMOS) technology has allowed the SGB20N60ATMA1 to extend its operating monitoring range (OMR) resulting in increased performance, making it the component of choice for large power surface mount applications.

Working Principle

The SGB20N60ATMA1 is an IGBT that has a high-speed switching operation; it is comprised of two MOSFET transistors stacked on top of each other. The source terminal (emitter) is connected to a drive circuit, while the drain terminal (collector) is connected to the load. An IGBT operates by utilizing its gate voltage, which is applied only to the top MOSFET transistor (Gate-Emitter). The gate voltage can either be positive or negative - depending on the type. It is through this application of voltage that the current flows from the Source-Gate to the Gate-Emitter junction, allowing for current flow from the drain to the source.Since the IGBT doesn\'t require a high gate voltage, low switching losses and high switching speeds are achievable. Furthermore, since only one transistor (Top MOSFET) is used for controlling the voltage and current, this device can be used in extremely harsh conditions such as high temperature and high voltage.

Conclusion

In conclusion, the SGB20N60ATMA1 is a single IGBT specifically used for high-speed switching applications such as power converters, welding equipment, DC-DC converters, lighting applications and more. The IGBT is composed of two terminals, emitter and collector, an additional gate and a drive circuit. The specific working principle of the IGBT is based upon the application of a gate voltage which, depending on the type of IGBT, can be either positive or negative, thereby allowing for current flow from the drain to the source. The IGBT provides efficient and durable results and is therefore highly preferred for surface mount applications due to its extended operating monitoring range.

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