SGF5N150UFTU Allicdata Electronics
Allicdata Part #:

SGF5N150UFTU-ND

Manufacturer Part#:

SGF5N150UFTU

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: IGBT 1500V 10A 62.5W TO3PF
More Detail: IGBT 1500V 10A 62.5W Through Hole TO-3PF
DataSheet: SGF5N150UFTU datasheetSGF5N150UFTU Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Power - Max: 62.5W
Supplier Device Package: TO-3PF
Package / Case: SC-94
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Test Condition: 600V, 5A, 10 Ohm, 10V
Td (on/off) @ 25°C: 10ns/30ns
Gate Charge: 30nC
Input Type: Standard
Switching Energy: 190µJ (on), 100µJ (off)
Series: --
Vce(on) (Max) @ Vge, Ic: 5.5V @ 10V, 5A
Current - Collector Pulsed (Icm): 20A
Current - Collector (Ic) (Max): 10A
Voltage - Collector Emitter Breakdown (Max): 1500V
IGBT Type: --
Moisture Sensitivity Level (MSL): --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Power semiconductor components are becoming increasingly popular as they are highly efficient and can provide high power output in small packages. The SGF5N150UFTU is a single IGBT module specifically designed to provide high-performance switching capabilities with minimal energy losses. The device is well suited for a variety of applications, ranging from motor control to power conversion, and can also be used in conjunction with other power-square devices for greater efficiency.

The SGF5N150UFTU is manufactured using advanced fabrication techniques, resulting in excellent electrical characteristics, low gate charge losses, and exceptional thermal dissipation. The device consists of a single N-channel device and supports Forward-Bias Safe Operating Areas (FBSOAs). Being an IGBT module, the device combines the advantages of both a MOSFET and a bipolar transistor, allowing it to deliver increased power efficiency and switching frequencies.

The SGF5N150UFTU has a maximum collector voltage of 150 volts with a peak current rating of 10A, and can operate at frequencies up to 4MHz. In addition, it has a low saturation voltage of 1.5V and can be used in wide switching applications such as motor control and power conversion. The specific data is subject to PDF, and the above content is for reference

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