Allicdata Part #: | SGH20N60RUFDTU-ND |
Manufacturer Part#: |
SGH20N60RUFDTU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | IGBT 600V 32A 195W TO3P |
More Detail: | IGBT 600V 32A 195W Through Hole TO-3PN |
DataSheet: | SGH20N60RUFDTU Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Power - Max: | 195W |
Supplier Device Package: | TO-3PN |
Package / Case: | TO-3P-3, SC-65-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Reverse Recovery Time (trr): | 95ns |
Test Condition: | 300V, 20A, 10 Ohm, 15V |
Td (on/off) @ 25°C: | 30ns/48ns |
Gate Charge: | 55nC |
Input Type: | Standard |
Switching Energy: | 524µJ (on), 473µJ (off) |
Series: | -- |
Vce(on) (Max) @ Vge, Ic: | 2.8V @ 15V, 20A |
Current - Collector Pulsed (Icm): | 60A |
Current - Collector (Ic) (Max): | 32A |
Voltage - Collector Emitter Breakdown (Max): | 600V |
IGBT Type: | -- |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Not For New Designs |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
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The SGH20N60RUFDTU is a single-type insulated gate bipolar transistor (IGBT). IGBTs can be used for a variety of purposes including power regulation, motor control, switching, and more. In this article, we will discuss the application field and working principle of the SGH20N60RUFDTU.
Firstly, the SGH20N60RUFDTU is most commonly used in motor control applications due to its high current and high power ratings. It also has a relatively low voltage rating, making it suitable for a variety of applications. Additionally, the SGH20N60RUFDTU is easy to use and offers a wide range of switching capabilities, making it suitable for a variety of applications.
In terms of its working principle, the SGH20N60RUFDTU consists of two BJT transistors, one n-type and one p-type. When the transistor is used in an application, the p-type and n-type transistors are connected together, creating a current path between the gate and source. When a voltage is applied to the gate, the current path is opened up and current begins to flow from the source to the drain. In this way, the transistor is able to control the current flow in the circuit.
In conclusion, the SGH20N60RUFDTU is a single type insulated gate bipolar transistor (IGBT) which is ideal for motor control applications due to its high current and power ratings. It has a relatively low voltage rating and offers a wide range of switching capabilities. In terms of its working principle, it consists of two BJT transistors, one p-type and one n-type, which are connected together to create a current path between the gate and source. When a voltage is applied to the gate, the current path is opened up and current begins to flow from the source to the drain, allowing the transistor to control the current flow in the circuit.
The specific data is subject to PDF, and the above content is for reference
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