
Allicdata Part #: | SGM2N60UFTF-ND |
Manufacturer Part#: |
SGM2N60UFTF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | IGBT 600V 2.4A 2.1W SOT-223 |
More Detail: | IGBT 600V 2.4A 2.1W Surface Mount SOT-223-4 |
DataSheet: | ![]() |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
1 +: | 0.00000 |
Specifications
Power - Max: | 2.1W |
Supplier Device Package: | SOT-223-4 |
Package / Case: | TO-261-4, TO-261AA |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Test Condition: | 300V, 1.2A, 200 Ohm, 15V |
Td (on/off) @ 25°C: | 15ns/80ns |
Gate Charge: | 9nC |
Input Type: | Standard |
Switching Energy: | 30µJ (on), 13µJ (off) |
Series: | -- |
Vce(on) (Max) @ Vge, Ic: | 2.6V @ 15V, 1.2A |
Current - Collector Pulsed (Icm): | 10A |
Current - Collector (Ic) (Max): | 2.4A |
Voltage - Collector Emitter Breakdown (Max): | 600V |
IGBT Type: | -- |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Obsolete |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
Description
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The SGM2N60UFTF is a 600V N-Channel insulated-gate bipolar transistor (IGBT) made by Fujitsu. It is classified as a single IGBT, which means that the one device contains both the n-channel and the p-channel transistors. This type of IGBT can provide much higher operating speeds than conventional bipolar junction transistors while having similar levels of power dissipation. The SGM2N60UFTF is designed for fast switching applications such as motor drives and power converters, as well as general-purpose inverter circuits.The working principle of the SGM2N60UFTF is similar to other IGBTs - it uses a voltage applied to the gate to control the current flow from the drain to the source. The device works by using a gate terminal to regulate the flow of current through the transistor. When a positive voltage is applied to the gate terminal, a hole-electron pair is generated in the gate. This allows current to pass from the drain to the source. When a negative voltage is applied to the gate terminal, the hole-electron pairs are neutralized, preventing current flow from the drain to the source.The SGM2N60UFTF has a forward voltage drop of 1.75V and a maximum continuous drain current of 60A. It also has an on-resistance of 1.0 ohms and a gate charge of 3.76 nC. The device has a maximum avalanche energy rating of 8mJ and a maximum peak pulse current rating of 160A. The device is also protected against overvoltage and reverse current conditions.The SGM2N60UFTF is rated for operation at temperatures of up to 150 degrees Celsius. It is designed to be used in industrial and consumer applications such as motor control, power converters, inverters, and UPS systems. The SGM2N60UFTF is also commonly used in DC motor drives, solar inverters, and UPS systems.Due to its fast switching speed and versatile application fields, the SGM2N60UFTF is a great choice for those looking for a reliable, high-performance IGBT. It can be used in a wide range of applications, from motor control to solar inverters. With its ratings and protection features, the SGM2N60UFTF is a great choice for anyone looking for a reliable IGBT.
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