Allicdata Part #: | SGP23N60UFTU-ND |
Manufacturer Part#: |
SGP23N60UFTU |
Price: | $ 1.86 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | IGBT 600V 23A 100W TO220-3 |
More Detail: | IGBT 600V 23A 100W Through Hole TO-220-3 |
DataSheet: | SGP23N60UFTU Datasheet/PDF |
Quantity: | 128 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
1 +: | $ 1.68840 |
10 +: | $ 1.51830 |
100 +: | $ 1.22031 |
500 +: | $ 1.00262 |
1000 +: | $ 0.83075 |
Power - Max: | 100W |
Base Part Number: | SG*23N60 |
Supplier Device Package: | TO-220-3 |
Package / Case: | TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Test Condition: | 300V, 12A, 23 Ohm, 15V |
Td (on/off) @ 25°C: | 17ns/60ns |
Input Type: | Standard |
Switching Energy: | 115µJ (on), 135µJ (off) |
Series: | -- |
Vce(on) (Max) @ Vge, Ic: | 2.6V @ 15V, 12A |
Current - Collector Pulsed (Icm): | 92A |
Current - Collector (Ic) (Max): | 23A |
Voltage - Collector Emitter Breakdown (Max): | 600V |
IGBT Type: | -- |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
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The SGP23N60UFTU is a 600V N-channel Insulated Gate Bipolar Transistor (IGBT) belonging to the series of Single IGBTs. IGBTs are considered to be a type of transistor, which is a semiconductor device. Therefore, it works similarly to other transistors, however, the IGBT comes with more advantages, such as high-efficiency operation and low-on-state voltage drop. This SGP23N60UFTU IGBT follows the conventional IGBT principle, which is composed of N-channel MOSFET and PNP bipolar junction transistor (BJT).
This specific IGBT can generate bigger currents of up to 350A and much higher power ratings than other transistors, although it has a relatively low reverse blocking voltage of 600V. This IGBT also includes output current sensing via a transient voltage suppressor diode, and advanced gate charge technology for increased performance at higher switching frequencies.
The SGP23N60UFTU IGBT can be used in a variety of different applications, from switching power supplies, which are power supplies used in AC-DC or DC-DC conversion, to motor control for industrial applications. It can also be used in many consumer electronics, communications, and automotive applications, such as the control of the battery charges of electric vehicles. Due to its low on-state voltage drop, this IGBT is suitable for high-efficiency applications as well.
The principle of operation of this transistor is quite straightforward. The IGBT has two main terminals: one is the Collector (C), and the other one is the Emitter (E). The Collector is usually connected to the power supply, whereas the Emitter is connected to the load. When a positive voltage is applied to the Gate (G) of the transistor, electrons are able to flow from the Emitter to the Collector and a continuous current path is created. However, when the Gate voltage is removed, the channel between the Collector and the Emitter is blocked and no current is able to flow. Thus, the IGBT can be used as a switch.
The SGP23N60UFTU IGBT is a powerful single IGBT that offers a wide range of applications due to its high efficiency and relatively low on-state voltage drop. Moreover, its operation can be easily understood by its simple but effective switching principle.
The specific data is subject to PDF, and the above content is for reference
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