SGP40N60UFTU

Power - Max:	160W
Base Part Number:	SG*40N60
Supplier Device Package:	TO-220
Package / Case:	TO-220-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Test Condition:	300V, 20A, 10 Ohm, 15V
Td (on/off) @ 25°C:	15ns/65ns
Gate Charge:	97nC
Input Type:	Standard
Switching Energy:	160µJ (on), 200µJ (off)
Series:	--
Vce(on) (Max) @ Vge, Ic:	2.6V @ 15V, 20A
Current - Collector Pulsed (Icm):	160A
Current - Collector (Ic) (Max):	40A
Voltage - Collector Emitter Breakdown (Max):	600V
IGBT Type:	--
Moisture Sensitivity Level (MSL):	--
Part Status:	Obsolete
Lead Free Status / RoHS Status:	--
Packaging:	Tube

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Application Field and Working Principle of SGP40N60UFTU

The SGP40N60UFTU is an ultra-low vcesat, fast-switching Insulated Gate Bipolar Transistor (IGBT). As a single device, the IGBT offers a fast switching, low consumption, and low profile design, making it an ideal choice for a variety of switch mode power applications.

IGBTs – Single

An IGBT is a type of power semiconductor device that combines the low voltage control of a metal-oxide-semiconductor field-effect transistor (MOSFET) with the high-current conduction capability of a bipolar transistor. IGBTs are capable of switching voltages up to 6,000 volts and currents up to 600 amps, making them well suited for a variety of switching applications.The SGP40N60UFTU is a single IGBT, meaning it has a single transistor structure with a single gate voltage control structure. This structure allows for high-frequency switching due to the low on-state resistance of the single device. Furthermore, the SGP40N60UFTU is capable of withstanding high current stress levels, allowing for improved longevity and reliability.

Applications of SGP40N60UFTU

The SGP40N60UFTU is typically used in applications that require ultra-low vcesat values, such as motor drives and converters. It is also often used in ballast and UPS applications, making it a versatile single IGBT. Furthermore, the SGP40N60UFTU is suitable for applications where frequency rates are high, as it is capable of switching at a rate of up to 40 KHz, making it well suited for high-speed switching applications.

Working Principle of SGP40N60UFTU

The SGP40N60UFTU has a unique structure consisting of two transistors, with the two transistor devices separated by an insulating layer. This structure allows for low voltage control, as the gate voltage is applied only to the Mosfet part, while the main voltage is connected to the bipolar transistor. The Insulated Gate Bipolar Transistor device enables bidirectional current conduction, making it an ideal device for switch mode power applications.The SGP40N60UFTU operates when a voltage is applied to the gate of the IGBT, which then generates an electric field to control the channel current. This electric field allows carriers to move freely between the two transistor devices, creating a conducting channel in the IGBT device. As the gate voltage is increased, the electric field increases, resulting in higher conduction across the IGBT channel. When the gate voltage is decreased, the conduction decreases and the IGBT device is turned off.

Conclusion

In conclusion, the SGP40N60UFTU is a single IGBT that can offer a wide range of applications due to its ultra-low vcesat, fast-switching, and low profile design. It is capable of switching voltages up to 6,000 volts and is suitable for a variety of switch mode power applications. The IGBT’s operating principle revolves around controlling the channel current with a gate voltage, allowing carriers to move freely between the two transistor devices to create a conducting channel in the device.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description