SGP6N60UFDTU

Switching Energy:	57µJ (on), 25µJ (off)
Base Part Number:	SG*6N60
Supplier Device Package:	TO-220
Package / Case:	TO-220-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Reverse Recovery Time (trr):	52ns
Test Condition:	300V, 3A, 80 Ohm, 15V
Td (on/off) @ 25°C:	15ns/60ns
Gate Charge:	15nC
Input Type:	Standard
Series:	--
Power - Max:	30W
Vce(on) (Max) @ Vge, Ic:	2.6V @ 15V, 3A
Current - Collector Pulsed (Icm):	25A
Current - Collector (Ic) (Max):	6A
Voltage - Collector Emitter Breakdown (Max):	600V
IGBT Type:	--
Moisture Sensitivity Level (MSL):	--
Part Status:	Obsolete
Lead Free Status / RoHS Status:	--
Packaging:	Tube

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SGP6N60UFDTU has been designed as a PowerMESH™ 5th generation product and is one of the most commonly used transistors in automotive applications. The device is a high-speed insulated gate bipolar transistor (IGBT) that enables excellent performance and long-term reliability. It is specifically designed to provide low conduction and switching losses, low temperature operation and robustness under harsh environmental and electrical conditions.This device has a 600V, 6A drain current rating and is suitable for applications such as motor control, DC-AC converters and solar inverters. It is manufactured using the latest in PowerMESH™ technology to provide superior performance in terms of switching frequency, thermal response and dv/dt immunity. The device is also compliant with the latest JEDEC safety standards and has been certified for industrial ratings.The superior performance of the device is achieved through the use of a novel structure known as a MOS p-channel GTR (MPGTR). The MPGTR structure consists of a MOS gate-controlled thyristor (GTR) which is able to drive the emitter-collector junction of the device. A GTR is an interrupter-type device which can be used to switch the current flow in a circuit by controlling the voltage at the gate.The device also features excellent switching speed, low power loss and ability to operate at high frequencies. The excellent thermal response of the device results in faster transients and lower switching losses. Additionally, the device offers a low input drive requirement, allowing it to be easily driven by a wide range of gate drivers.In terms of working principle, SGP6N60UFDTU is an N-channel IGBT which employs a unique Gate-Controlled Thyristor (GCT) structure. This structure consists of two MOSFETs and a Thyristor in parallel, with the gate of the thyristor being controlled by the voltage/current applied to it. When an appropriate voltage/current is applied to the gate, the thyristor is turned on, allowing the two MOSFETs to conduct current. This eliminates the need for an external diode, thus reducing overall power losses.The superior performance and the wide operating temperature range of the device make it suitable for use in a variety of industrial, automotive and alternative energy applications. The high current carrying capability and the low operating voltage make it ideal for motor control and power conversion applications. Furthermore, its excellent switching speed and ease of use make it an ideal choice for use in solar inverters and wind turbine applications.In conclusion, SGP6N60UFDTU is a high-performance IGBT transistor designed for applications requiring low conductive and switching losses, high frequency operation and robustness in harsh conditions. The device is compliant with the latest JEDEC safety standards, has a wide operating temperature range and offers superior performance. Its high current-carrying capability, low conduction losses, high switching speed and ease of use make it an ideal choice for applications such as motor control, power conversion and alternative energy.

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