Allicdata Part #: | SGR6N60UFTM-ND |
Manufacturer Part#: |
SGR6N60UFTM |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | IGBT 600V 6A 30W DPAK |
More Detail: | IGBT 600V 6A 30W Surface Mount D-Pak |
DataSheet: | SGR6N60UFTM Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
1 +: | 0.00000 |
Power - Max: | 30W |
Base Part Number: | SG*6N60 |
Supplier Device Package: | D-Pak |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Test Condition: | 300V, 3A, 80 Ohm, 15V |
Td (on/off) @ 25°C: | 15ns/60ns |
Gate Charge: | 15nC |
Input Type: | Standard |
Switching Energy: | 57µJ (on), 25µJ (off) |
Series: | -- |
Vce(on) (Max) @ Vge, Ic: | 2.6V @ 15V, 3A |
Current - Collector Pulsed (Icm): | 25A |
Current - Collector (Ic) (Max): | 6A |
Voltage - Collector Emitter Breakdown (Max): | 600V |
IGBT Type: | -- |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Obsolete |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The SGR6N60UFTM belongs to the category of single IGBTs (Insulated-Gate Bipolar Transistors) that are used for a variety of purposes in different applications. It is a highly efficient low-loss device that can be used to optimize the layout of power supply solutions. The SGR6N60UFTM features a wide reverse blocking voltage, making it suitable for applications that involve high voltage switching.
In electric equipment, an IGBT (Insulated-Gate Bipolar Transistor) is an electrical power switching device. It works by using electric fields to control the flow of electrical current between two terminals. A typical IGBT consists of two MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistor) connected in parallel, one acting as a majority carrier and the other acting as a minority carrier. The electric field generated by the combination of the electric fields from both transistors regulates the current flow between them. The majority carrier is always from the main source, and the minority carriers are from the gate. This combination of MOSFETs allows for rapid switching and low losses when operating in the range of higher voltages.
The SGR6N60UFTM comes in various voltage ratings and can be used in a wide range of applications. It has a blocking voltage from 200V to 1000V, making it suitable for applications involving high voltage switching. It is also highly efficient and offers low losses when operated with high currents. The characteristics of the device make it suitable for use in power supplies, motor controls, lighting and other related areas where high voltage switching is desired.
The working principle of the SGR6N60UFTM can be outlined as follows. When the gate is left open or has a weak or no signal, the device behaves like an open-circuit, allowing no current to pass between terminals. However, when the gate voltage is increased with a drive signal, the device begins to conduct, allowing current flow between the terminals. The device can be used in applications that require high voltage switching, such as motor control, lighting and other similar applications, where rapid switching and low losses are desired.
The SGR6N60UFTM is an efficient and reliable IGBT single device that can be used for applications involving high voltage switching. It is highly efficient, offers low losses when operated with high currents and can be used to optimize the layout of power supply solutions. Its wide reverse blocking voltage also makes it suitable for many applications. The device is safe to use and allows for rapid switching, making it an ideal choice for power supplies, motor controls, lighting and other related areas.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
SGR6N60UFTM | ON Semicondu... | 0.0 $ | 1000 | IGBT 600V 6A 30W DPAKIGBT... |
SGR6N60UFTF | ON Semicondu... | 0.0 $ | 1000 | IGBT 600V 6A 30W DPAKIGBT... |
IGBT 1200V 9.6A 62.5W TO247-3IGBT 1200V...
IGBT 1200V TO247-3IGBT
IGBT 1200V TO247-3IGBT 1200V 57A 200W T...
IGBT 600V TO-247 COPAKIGBT
INTEGRATED CIRCUITIGBT 600V 6A 40W Surf...
POWER MOSFET TO-3IGBT