SGS23N60UFDTU

Switching Energy:	115µJ (on), 135µJ (off)
Base Part Number:	SG*23N60
Supplier Device Package:	TO-220F
Package / Case:	TO-220-3 Full Pack
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Reverse Recovery Time (trr):	60ns
Test Condition:	300V, 12A, 23 Ohm, 15V
Td (on/off) @ 25°C:	17ns/60ns
Gate Charge:	49nC
Input Type:	Standard
Series:	--
Power - Max:	73W
Vce(on) (Max) @ Vge, Ic:	2.6V @ 15V, 12A
Current - Collector Pulsed (Icm):	92A
Current - Collector (Ic) (Max):	23A
Voltage - Collector Emitter Breakdown (Max):	600V
IGBT Type:	--
Moisture Sensitivity Level (MSL):	--
Part Status:	Not For New Designs
Lead Free Status / RoHS Status:	--
Packaging:	Tube

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Transistors - IGBTs - SingleAn insulated gate bipolar transistor (IGBT) is a type of power transistor used mainly in power conversion applications, such as motor control, power tools and lighting control. The SGS23N60UFDTU is a three-terminal and unipolar N-channel IGBT with a rated collector current of 23A. This article will discuss the application field of the SGS23N60UFDTU as well as its working principle.Application FieldsThe SGS23N60UFDTU is suitable for use in many types of applications, including motor control, circuit breakers, UPS systems, automotive electronics, power tools and home appliance. As an unipolar device, it is ideal for low-voltage and high-power switching applications in the range of 100V to 600V and 25A to 60A.Due to its low-on-state voltage drop, the SGS23N60UFDTU can be used to reduce energy loss and improve the efficiency of applications. In addition, the device has very fast switching times and can be used in pulsed power applications. This makes it ideal for use in high-performance motor controllers.The SGS23N60UFDTU also has excellent thermal properties, making it suitable for high-power applications. It can be used in circuits with high frequencies and high switching losses. It is also suitable for use in circuits with low power dissipation due to its low thermal resistance.Working PrincipleThe working principle of the SGS23N60UFDTU relies on the insulation layer between the emitter and the collector. The emitter is insulated from the collector by an oxide layer and a P-type semiconductor material. A reverse-bias voltage is applied between the emitter and the collector, creating a depletion region that acts as a barrier.When a positive gate voltage is applied, electrons from the gate flow across the oxide layer and accelerate towards the collector down the depletion region. The electrons then enter the collector and a current is created. The current is then amplified to create a high-powered output. In order to turn off the IGBT, the voltage applied to the gate must be reversed. This causes the current to stop flowing and the conduction channel is closed. The SGS23N60UFDTU has a reverse breakdown voltage of 600V, meaning it can withstand very high voltage spikes without permanent damage.ConclusionThe SGS23N60UFDTU insulated gate bipolar transistor is a three-terminal unipolar N-channel IGBT. It has a rated collector current of 23A and is suitable for use in motor control, UPS systems, automotive electronics, power tools and home appliances. Its low-on-state voltage drop, fast switching times, high-power applications and its reverse breakdown voltage of 600V make it ideal for many types of applications. The device works by applying a positive gate voltage which creates a conduction channel between the emitter and the collector. Reversing the gate voltage closes the conduction channel and turns off the device.

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