Power - Max:	22W
Base Part Number:	SG*6N60
Supplier Device Package:	TO-220F
Package / Case:	TO-220-3 Full Pack
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Test Condition:	300V, 3A, 80 Ohm, 15V
Td (on/off) @ 25°C:	15ns/60ns
Gate Charge:	15nC
Input Type:	Standard
Switching Energy:	57µJ (on), 25µJ (off)
Series:	--
Vce(on) (Max) @ Vge, Ic:	2.6V @ 15V, 3A
Current - Collector Pulsed (Icm):	25A
Current - Collector (Ic) (Max):	6A
Voltage - Collector Emitter Breakdown (Max):	600V
IGBT Type:	--
Moisture Sensitivity Level (MSL):	--
Part Status:	Obsolete
Lead Free Status / RoHS Status:	--
Packaging:	Tube

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Introduction

The SGS6N60UFTU is a single-channel 600V N-channel Enhanced-Voltage-Tolerance Insulated Gate Bipolar Transistor (IGBT). This product offers very low gate charge for fast switching applications, improved avalanche energy, and fast I/O turn-on time for driving capability. This device also offers very low on-state resistance with maximum reserve voltage tolerance and has been designed for high frequency switching applications.

Application Field

The SGS6N60UFTU can be used in a variety of applications such as in switches, motor controllers, and Uninterruptible Power Supplies (UPS). It can also be used in solar inverters, as a switch in power conditioning and as a switch in high frequency generator circuits. Furthermore, the device can be used in light drivers and power switch in LCD drives.

Working Principle

The SGS6N60UFTU is an N-channel IGBT. Its source is connected to the positive voltage supply, while its drain is connected to the negative voltage supply. A gate voltage is then applied to the gate electrode which causes a current to flow between the source and the drain. This current is controlled by the amount of voltage applied to the gate electrode.The SGS6N60UFTU is designed to have an Enhanced-Voltage-Tolerance, which means that it can withstand higher voltage levels than standard IGBTs do. This is achieved by the use of a special semiconductor material in the device, called Superjunction technology. This material is composed of alternating stacked layers of N-type material and P-type material, creating a series of electric junctions which are well protected inside each layer. This allows the device to withstand high voltages without experiencing breakdowns or other electrical problems.The SGS6N60UFTU also offers superior performance compared to other IGBTs in terms of its low on-state resistance and maximum reserve voltage tolerance. This ensures that the device can operate efficiently and reliably over a wide range of temperatures and voltages.

Conclusion

The SGS6N60UFTU is an ideal choice for applications requiring high frequency switching capabilities and robust thermal performance. It offers superior performance with fast switching time and very low on-state resistance. This device is designed with an Enhanced-Voltage-Tolerance which allows it to operate reliably in high voltage environments. In addition, it is suitable for a variety of applications such as switches, motor controllers, UPS, solar inverters, and light drivers.

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