SIGC158T120R3LEX1SA2 Allicdata Electronics
Allicdata Part #:

SIGC158T120R3LEX1SA2-ND

Manufacturer Part#:

SIGC158T120R3LEX1SA2

Price: $ 17.27
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT 1200V 150A DIE
More Detail: IGBT Trench Field Stop 1200V Surface Mount Die
DataSheet: SIGC158T120R3LEX1SA2 datasheetSIGC158T120R3LEX1SA2 Datasheet/PDF
Quantity: 1000
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
1 +: $ 15.69960
Stock 1000Can Ship Immediately
$ 17.27
Specifications
Series: --
Part Status: Active
Lead Free Status / RoHS Status: --
IGBT Type: Trench Field Stop
Moisture Sensitivity Level (MSL): --
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector Pulsed (Icm): 450A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 150A
Switching Energy: --
Input Type: Standard
Td (on/off) @ 25°C: --
Test Condition: --
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die
Description

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The SIGC158T120R3LEX1SA2 is an IGBT single transistor component that is used in a variety of applications. It is manufactured by Infineon Technologies and is made to be highly reliable and to provide superior performance. This component has an operating voltage of 800 V and a continuous current of 158A. It is ideal for use in applications that require high power density, cost-effective power solutions, and improved system performance.

An IGBT is a type of transistor that is typically used in power systems for its superior performance. It is a combination of both a bipolar transistor and a field effect transistor, which allows the transistor to switch rapidly between on and off states for improved performance. It is often used for switching high power in applications such as motor control, inverter control, load control, and power conversion. The IGBT single transistor is designed to minimize switching losses, as well as reduce system costs.

The working principle of an IGBT transistor is quite simple. It has one main gate that controls the current flow through the transistor. When a voltage is applied to the gate, the transistor will start to conduct current, allowing the voltage to flow. When the voltage is removed, the transistor will become non-conductive, stopping the current flow. This switching action is what makes IGBTs so useful, as they can be used to switch large currents as well as various amounts of power quickly and efficiently.

The SIGC158T120R3LEX1SA2 can be used in a variety of applications that require the fast switching of power. This includes electric motor control, variable frequency drives, solar photovoltaic inverters, uninterruptible power supplies, and low and medium voltage drives. Additionally, this component can be used in applications such as high frequency motor control, static transfer switches, power factor correction, as well as electronic appliance control.

The SIGC158T120R3LEX1SA2 is a reliable and cost-effective solution for power systems that require fast and efficient switching. It is highly reliable, making it suitable for use in a variety of applications, and can provide superior performance when compared to other types of transistors. In addition, it is easy to integrate into existing systems, making it the ideal choice for applications that require fast switching of power.

The specific data is subject to PDF, and the above content is for reference

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