SKB02N60E3266ATMA1

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SKB02N60E3266ATMA1 is a high voltage, high current insulated gate bipolar transistor (IGBT) module designed for a variety of power applications. This IGBT module consists of two PN junction field-effect transistors (FET) placed between two collector electrodes. It provides superior electrical insulation between the collector and emitter terminal, making it an ideal choice for power electronics such as power supplies, motor drivers, and amplifiers.

The SKB02N60E3266ATMA1 is a double side-cooled IGBT module with an on-chip collector-to-emitter voltage of ≥3kV, a collector current of up to 2A, and a junction temperature of up to 85°C. Its Advanced Bipolar Technology (ABT), comprising of a low-voltage avalanche level device and an improved gate driver, enables ultra-fast switching and short-circuit protection. It also provides excellent immunity against environmental fluctuations, temperature, humidity, and EMI distortions.

The SKB02N60E3266ATMA1 is suitable for many power applications, such as Power Factor Correction (PFC) boost, AC/DC converters, Automotive battery systems, and DC/DC converters. It can also be used as a power switch in inverters and motor drives, making it an ideal choice for industrial, automotive, and other commercial applications. In addition to excellent on-state characteristics, it also offers fast switching and short-circuit protection.

The working principle of the SKB02N60E3266ATMA1 is based on the concept of the single-device IGBT, which uses the bi-directional conduction current flow through the emitter and collector terminals. The emitter receives a voltage signal that opens and closes the internal PN junction FET, allowing the current flow to pass through the internal power transistor. When this current flow is stopped or reversed, the IGBT switches off or on.

The SKB02N60E3266ATMA1 IGBT module provides advanced switching performance with low switching losses and excellent thermal characteristics. It also offers an on-chip EMC filter for improved EMI compatibility. As a result, this IGBT module can be used in a variety of applications requiring high power density and low power losses in a power-efficient manner.

The SKB02N60E3266ATMA1 is an ideal IGBT for many power switching applications due to its high voltage and high current rating, advanced bipolar technology, and excellent on-state and short-circuit characteristics. Its wide range of applications makes it an ideal choice for a variety of industrial, automotive, and commercial applications.

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