SKP15N60XKSA1 Allicdata Electronics
Allicdata Part #:

SKP15N60XKSA1-ND

Manufacturer Part#:

SKP15N60XKSA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT 600V 31A 139W TO220-3
More Detail: IGBT NPT 600V 31A 139W Through Hole PG-TO220-3
DataSheet: SKP15N60XKSA1 datasheetSKP15N60XKSA1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Switching Energy: 570µJ
Supplier Device Package: PG-TO220-3
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Reverse Recovery Time (trr): 279ns
Test Condition: 400V, 15A, 21 Ohm, 15V
Td (on/off) @ 25°C: 32ns/234ns
Gate Charge: 76nC
Input Type: Standard
Series: --
Power - Max: 139W
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A
Current - Collector Pulsed (Icm): 62A
Current - Collector (Ic) (Max): 31A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: NPT
Part Status: Obsolete
Packaging: Tube 
Description

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The SKP15N60XKSA1 is a part of a family of insulated gate bipolar transistors (IGBTs) developed for high power applications. The device is a silicon based, single-pole, single-throw (SPST) switch, which can be used for controlling power within systems that require high efficiency and reliability. In addition to being highly efficient, the SKP15N60XKSA1 is also noted for offering low power losses and improved power switching performance.

Application Field

The SKP15N60XKSA1 is a high-power switch intended for use in consumer and industrial applications. Common uses of the device include motor drive systems, air conditioning systems, three-phase inverters and industrial motor controls. Additionally, the device can also be used for uninterruptable power supplies (UPSs), photovoltaics, surge suppression and welding applications. The device is particularly well suited for use in high power electric vehicle (EV) and hybrid electric vehicle (HEV) applications, due to its high switching frequency and low conduction losses.

Working Principle

The SKP15N60XKSA1 is an IGBT device that combines both the characteristics of a bipolar junction transistor and a field effect transistor in order to offer superior speed and efficiency. An IGBT device works by utilizing a voltage-controlled gate that supplies a bipolar current flow to the device. In essence, this allows the user to control the flow of current within the device and helps to reduce switching losses to a minimum. When the gate is activated, the device is turned on, allowing current to flow and allowing the device to conduct electricity.

In addition to being an efficient power switch, the device also features a soft Turn-Off (STO) capability, which helps to reduce switching losses and further improve performance. This feature helps to effectively reduce the voltage drop when the device is turned off, making the device highly efficient and reliable. STO also helps to reduce the chance of power arcing, which can damage the device and reduce its potential service life.

The SKP15N60XKSA1 device also features IGBT-friendly integrated reversing diode circuits, which help to reduce the circuit complexity of the device and further improve its performance. This helps to ensure that the device can handle larger currents, while still providing superior efficiency. The integrated reversing diode also helps to reduce the thermal losses of the device.

Overall, the SKP15N60XKSA1 is an extremely efficient, reliable and powerful IGBT device, offering a variety of features and benefits to end users. The device is well suited for a variety of high power applications, offering superior power switching performance and low conduction losses.

The specific data is subject to PDF, and the above content is for reference

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