Allicdata Part #: | SKW07N120FKSA1-ND |
Manufacturer Part#: |
SKW07N120FKSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT 1200V 16.5A 125W TO247 |
More Detail: | IGBT NPT 1200V 16.5A 125W Through Hole PG-TO247-3 |
DataSheet: | SKW07N120FKSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Switching Energy: | 1mJ |
Supplier Device Package: | PG-TO247-3 |
Package / Case: | TO-247-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Reverse Recovery Time (trr): | 60ns |
Test Condition: | 800V, 8A, 47 Ohm, 15V |
Td (on/off) @ 25°C: | 27ns/440ns |
Gate Charge: | 70nC |
Input Type: | Standard |
Series: | -- |
Power - Max: | 125W |
Vce(on) (Max) @ Vge, Ic: | 3.6V @ 15V, 8A |
Current - Collector Pulsed (Icm): | 27A |
Current - Collector (Ic) (Max): | 16.5A |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
IGBT Type: | NPT |
Part Status: | Obsolete |
Packaging: | Tube |
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SKW07N120FKSA1 is a family of insulated-gate bipolar transistors (IGBTs) made by STMicroelectronics. This device is a single IGBT that can be used in a wide variety of applications. It has a maximum current rating of 6.5A and a maximum collector-emitter voltage rating of 1200V. The SKW07N120FKSA1 can also be used in high-side or low-side configurations. In addition, it has a maximum power dissipation rating of 50W.
SKW07N120FKSA1 is mainly used in power conversion applications. This includes AC-DC and DC-AC conversion, DC-DC buck and boost conversion, and variable speed drives. It can also be used in high-power motor control applications such as servo drives. In all these applications, the SKW07N120FKSA1 can provide reliable performance in the presence of high operating temperatures and other harsh conditions.
The working principle of the SKW07N120FKSA1 is based on the principles of both bipolar junction transistors (BJT) and field-effect transistors (FET). It consists of a base, collector, and emitter. The base is connected to a gate and forms the control element of the IGBT. The collector is connected to a positive voltage source, and the emitter is connected to a negative voltage source. The power flow is regulated by applying a voltage to the gate, which allows current to flow between the collector and emitter.
When the gate voltage is low, the transistor is in a cutoff state. This means that no current flows through the transistor, and the power is off. When the gate voltage is increased, the current increases and the power output is increased. The transistor will remain in the on state until the gate voltage is decreased. This allows for precise control of the power output.
The SKW07N120FKSA1 also has several protection features such as over-voltage protection, over-current protection, and thermal shutdown. These protection features allow for systems to be designed that are more reliable and safer. The device is also RoHS compliant, which makes it a suitable choice for applications that need to meet environmental standards.
In conclusion, the SKW07N120FKSA1 is a single IGBT that can be used in many different power conversion and motor control applications. Its working principle is based on the principles of both BJT and FET transistors. It has several protection features, including over-voltage, over-current, and thermal shutdown protection. The SKW07N120FKSA1 is also RoHS compliant, making it a suitable choice for applications that need to meet environmental standards.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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