SKW15N120FKSA1

Switching Energy:	1.9mJ
Supplier Device Package:	PG-TO247-3
Package / Case:	TO-247-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Reverse Recovery Time (trr):	65ns
Test Condition:	800V, 15A, 33 Ohm, 15V
Td (on/off) @ 25°C:	18ns/580ns
Gate Charge:	130nC
Input Type:	Standard
Series:	--
Power - Max:	198W
Vce(on) (Max) @ Vge, Ic:	3.6V @ 15V, 15A
Current - Collector Pulsed (Icm):	52A
Current - Collector (Ic) (Max):	30A
Voltage - Collector Emitter Breakdown (Max):	1200V
IGBT Type:	NPT
Part Status:	Obsolete
Packaging:	Tube

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction

SKW15N120FKSA1 is a high-speed 1700 V, 15 A, low gate driving power IGBT from STMicroelectronics. It is part of their STripFET™ family of state-of-the-art IGBTs for high-power switching applications. It has an active voltage of 1700 V, a dynamic dv/dt of 1200 V/ns, a leakage current of 0.120 μA, and a gate-source threshhold voltage of 1.8 V. It is rated to perform at junction temperatures from -40 to 150°C.The SKW15N120FKSA1 is used in a wide range of switching applications, including automotive and industrial motor drives, renewable energy and power grid systems, bridge rectification, welding, and UPS and string inverters. Its low gate driving power requirements, high switching speed, and low thermal resistance make it an ideal choice for energy-efficient applications.

Application Fields

SKW15N120FKSA1 IGBTs can be used in a range of applications requiring low gate driving power, high switching speed, and low thermal resistance. These include:

• Automotive Motor Drives: SKW15N120FKSA1 is commonly used in automotive applications such as engine management systems, electric power steering, and transmission control. Its low gate driving power requirements and high switching speed make it an ideal choice for fuel efficient applications.
• Industrial Motor Drives: SKW15N120FKSA1 IGBTs are also used in industrial applications, such as pumps, compressors, and generators. With its high dynamic dV/dt and low gate driving power, this IGBT is an ideal choice for applications that require fast switching speed and efficient operation.
• Renewable Energy and Power Grid Systems: SKW15N120FKSA1 IGBTs are suitable for a wide variety of renewable energy applications, such as wind and solar photovoltaic (PV) inverters. The high breakdown voltage and low leakage current of this IGBT make it well suited for use in high-voltage systems.
• Bridge Rectification: SKW15N120FKSA1 IGBTs can be used for bridge rectification in microprocessors and switched-mode power supplies. With its low gate-source threshold voltage, this IGBT is an ideal choice for low-power applications.
• Welding: SKW15N120FKSA1 IGBTs can be used in welding applications due to its high frequency switching capability and low conduction losses.
• UPS and String Inverters: SKW15N120FKSA1 IGBTs are ideal for use in UPS and string inverters due to their high-speed switching capability and low thermal resistance.

Working Principle

The SKW15N120FKSA1 is an insulated gate bipolar transistor (IGBT). It is a type of power semiconductor used for controlling or switching power from a low-current input control signal to a high-current load. The SKW15N120FKSA1 is usually connected between a power source and a load, allowing the control signal to switch the load\'s power on or off. When the control signal is low, the IGBT is off, and no current is allowed to flow through the load. When the control signal is high, the IGBT is on and the current can flow through the load. The SKW15N120FKSA1 is an IGBT with low gate-driving power requirements and high switching speed. This makes it well suited for applications that require high-speed switching and efficiency. The low gate-driving power requirements reduce the amount of power dissipated in the circuit and the high switching speed allows for high-frequency operations.

Conclusion

SKW15N120FKSA1 IGBTs are an ideal choice for applications requiring low gate driving power, high switching speed, and low thermal resistance. The IGBT is suitable for a variety of applications such as automotive and industrial motor drives, renewable energy and power grid systems, bridge rectification, welding, and UPS and string inverters. Its high breakdown voltage and low leakage current also make it well suited for high-voltage applications. Its low gate-driving power requirements and high switching speed make it an ideal choice for energy-efficient applications.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description