SMA5J11AHE3/61 Allicdata Electronics

SMA5J11AHE3/61 Circuit Protection

Allicdata Part #:

SMA5J11AHE3/61-ND

Manufacturer Part#:

SMA5J11AHE3/61

Price: $ 0.14
Product Category:

Circuit Protection

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: TVS DIODE 11V 18.2V DO214AC
More Detail: N/A
DataSheet: SMA5J11AHE3/61 datasheetSMA5J11AHE3/61 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
3600 +: $ 0.12304
Stock 1000Can Ship Immediately
$ 0.14
Specifications
Current - Peak Pulse (10/1000µs): 27.5A
Base Part Number: SMA5J
Supplier Device Package: DO-214AC (SMA)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: Automotive
Power Line Protection: No
Power - Peak Pulse: 500W
Series: Automotive, AEC-Q101, TransZorb®
Voltage - Clamping (Max) @ Ipp: 18.2V
Voltage - Breakdown (Min): 12.2V
Voltage - Reverse Standoff (Typ): 11V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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SMA5J11AHE3/61 is an ultra-low Schottky barrier diode designed specifically to protect sensitive circuit devices. It is typically used to protect sensitive electronic equipment from transient voltage spikes, such as high voltage caused by lightning, electromagnetic radiation, power cycling, electrostatic discharge (ESD), electro-magnetic interference (EMI), and other sources. It is one of the most widely used protections devices in the industry due to its fast response time, low capacitance, and low power dissipation.
The SMA5J11AHE3/61 is a two-terminal, low-voltage device. It is composed of a pair of diodes connected in a series arrangement. The diodes are used to form a barrier between the power supply and the load. This barrier prevents any excessive current from flowing through the device in either direction. This prevents damage to the circuit caused by over-current and over-voltage conditions.
When the voltage across the device exceeds the specified limit (the breakdown voltage), the diode begins to conduct current and starts protection mode. This protects the circuit from damage due to over-voltage. The device also has a reverse breakdown voltage, which is the voltage at which the current begins to flow in the opposite direction. This prevents the device from over-dissipating power in the event of an over-voltage condition.
The SMA5J11AHE3/61 is ideally suited for applications requiring fast response time and low capacitance. It is suitable for use in high frequency communication circuits, such as modems, radios, and other RF circuits. It can also be used for protection in automotive, industrial and consumer electronic circuits. It is also suitable for performance sensitive systems, such as computers and telecommunications equipment.
In terms of working principle, SMA5J11AHE3/61 uses the Schottky barrier junction between two different types of semiconductors. When the applied voltage exceeds the breakdown voltage, the current starts to flow from the junction and is limited by the built-in resistors. The device is able to handle large voltage and power levels, and its silicon construction allows it to activate quickly. The device also has a very low capacitance, which reduces electromagnetic interference.
In conclusion, the SMA5J11AHE3/61 TVS diode is a very useful protection device, which is suitable for preventing transient and over-voltage conditions in a wide range of applications. Its low capacitance and fast response time make it ideal for high frequency circuits, while its robust construction and wide voltage range make it suitable for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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