SMA6080 Allicdata Electronics
Allicdata Part #:

SMA6080-ND

Manufacturer Part#:

SMA6080

Price: $ 1.27
Product Category:

Discrete Semiconductor Products

Manufacturer: Sanken
Short Description: TRANS 3NPN/3PNP DARL 60V 12SIP
More Detail: Bipolar (BJT) Transistor Array 3 NPN, 3 PNP Darlin...
DataSheet: SMA6080 datasheetSMA6080 Datasheet/PDF
Quantity: 1000
1440 +: $ 1.15762
Stock 1000Can Ship Immediately
$ 1.27
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Transistor Type: 3 NPN, 3 PNP Darlington (3-Phase Bridge)
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2mA, 1A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 4V
Power - Max: 4W
Frequency - Transition: 50MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 12-SIP
Supplier Device Package: 12-SIP
Description

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The SMA6080 is a high performance monolithic NPN bipolar transistor array composed of three NPN transistors with common emitters and The SMA6080 is available in SC-70, SOT-343 and SOT-363 packages. The SMA6080 contains three transistors that share the same common emitter terminal. This array is comprised of three independent Darlington die pairs, with each pair having a common emitter terminal. The three transistors are connected as follows: the emitters are all connected to a common emitter terminal, the collectors are connected to three individual collector terminals, and the bases are connected to three different base terminals.

The main application fields of the SMA6080 include analog and digital circuit design, power amplifiers and other high frequency applications. It is also suitable for use as an input stage in low power systems, as a gain stage in audio amplifiers and as a switch in power supplies. The SMA6080 can also be used in voltage/current controllers, RF amplifiers and in many other fields.

The main advantages of this type of device over a single transistor are its increased current drive, better current control, and improved linearity. Due to the increased current gain and the monolithic die arrangement, the SMA6080 gains more current in a narrower bandwidth, meaning that its overall power dissipation is much lower than that of a single state device. It also has a much lower voltage drop when operating in a current limited mode. In addition, the SMA6080 can operate at extremely low temperatures with no significant change in its characteristics.

The SMA6080 has a working principle based on the Darlington pair. In a Darlington pair, two transistors are connected in series with a common emitter terminal. When current is applied to the base of the first transistor, it turns on and supplies base current to the second transistor. As a result, the second transistor also turns on and supplies current to the output, thus amplifying the input signal. The SMA6080 improves on this basic operation by allowing for a more efficient transfer of current between the transistors, resulting in improved linearity and current control.

The SMA6080 is a versatile device that provides a cost-effective solution for many high power applications. Its small size and low power consumption make it ideal for use in a variety of high density applications. Its wide range of voltages and temperatures make it suitable for many different applications. Its increased current drive and better current control mean that it can achieve high levels of performance in many applications.

In conclusion, the SMA6080 is a high performance transistor array composed of three NPN transistors with common emitters and collectors. The main advantages of this device are its increased current drive, better current control, and improved linearity. It is suitable for use in analog and digital circuit design, power amplifiers, low power systems, as a gain stage in audio amplifiers, switch applications in power supplies, voltage/current controllers, and other applications. Its working principle is based on the Darlington pair with improved current transfer between transistors.

The specific data is subject to PDF, and the above content is for reference

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