| Allicdata Part #: | SMA6080-ND |
| Manufacturer Part#: |
SMA6080 |
| Price: | $ 1.27 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Sanken |
| Short Description: | TRANS 3NPN/3PNP DARL 60V 12SIP |
| More Detail: | Bipolar (BJT) Transistor Array 3 NPN, 3 PNP Darlin... |
| DataSheet: | SMA6080 Datasheet/PDF |
| Quantity: | 1000 |
| 1440 +: | $ 1.15762 |
| Series: | -- |
| Packaging: | Tube |
| Part Status: | Active |
| Transistor Type: | 3 NPN, 3 PNP Darlington (3-Phase Bridge) |
| Current - Collector (Ic) (Max): | 2A |
| Voltage - Collector Emitter Breakdown (Max): | 60V |
| Vce Saturation (Max) @ Ib, Ic: | 1.5V @ 2mA, 1A |
| Current - Collector Cutoff (Max): | 100µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 2000 @ 1A, 4V |
| Power - Max: | 4W |
| Frequency - Transition: | 50MHz |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | 12-SIP |
| Supplier Device Package: | 12-SIP |
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The SMA6080 is a high performance monolithic NPN bipolar transistor array composed of three NPN transistors with common emitters and The SMA6080 is available in SC-70, SOT-343 and SOT-363 packages. The SMA6080 contains three transistors that share the same common emitter terminal. This array is comprised of three independent Darlington die pairs, with each pair having a common emitter terminal. The three transistors are connected as follows: the emitters are all connected to a common emitter terminal, the collectors are connected to three individual collector terminals, and the bases are connected to three different base terminals.
The main application fields of the SMA6080 include analog and digital circuit design, power amplifiers and other high frequency applications. It is also suitable for use as an input stage in low power systems, as a gain stage in audio amplifiers and as a switch in power supplies. The SMA6080 can also be used in voltage/current controllers, RF amplifiers and in many other fields.
The main advantages of this type of device over a single transistor are its increased current drive, better current control, and improved linearity. Due to the increased current gain and the monolithic die arrangement, the SMA6080 gains more current in a narrower bandwidth, meaning that its overall power dissipation is much lower than that of a single state device. It also has a much lower voltage drop when operating in a current limited mode. In addition, the SMA6080 can operate at extremely low temperatures with no significant change in its characteristics.
The SMA6080 has a working principle based on the Darlington pair. In a Darlington pair, two transistors are connected in series with a common emitter terminal. When current is applied to the base of the first transistor, it turns on and supplies base current to the second transistor. As a result, the second transistor also turns on and supplies current to the output, thus amplifying the input signal. The SMA6080 improves on this basic operation by allowing for a more efficient transfer of current between the transistors, resulting in improved linearity and current control.
The SMA6080 is a versatile device that provides a cost-effective solution for many high power applications. Its small size and low power consumption make it ideal for use in a variety of high density applications. Its wide range of voltages and temperatures make it suitable for many different applications. Its increased current drive and better current control mean that it can achieve high levels of performance in many applications.
In conclusion, the SMA6080 is a high performance transistor array composed of three NPN transistors with common emitters and collectors. The main advantages of this device are its increased current drive, better current control, and improved linearity. It is suitable for use in analog and digital circuit design, power amplifiers, low power systems, as a gain stage in audio amplifiers, switch applications in power supplies, voltage/current controllers, and other applications. Its working principle is based on the Darlington pair with improved current transfer between transistors.
The specific data is subject to PDF, and the above content is for reference
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| SMA6J14CA | Littelfuse I... | 0.1 $ | 1000 | TVS DIODES SMA 600W TR |
| SMA6J13A-TR | STMicroelect... | -- | 15000 | TVS DIODE 13V 23.9V SMA |
| SMA6J13A-E3/61 | Vishay Semic... | 0.07 $ | 1000 | TVS DIODE 13V 23.9V DO214... |
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| SMA6L10A | Littelfuse I... | -- | 1000 | TVS DIODE 10V 17V DO221AC |
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| SMA6J18CA-TR | STMicroelect... | -- | 1000 | TVS DIODE 18V 33.2V SMA |
| SMA6J100A-TR | STMicroelect... | 0.12 $ | 1000 | TVS DIODE 100V 172V SMA |
| SMA6J5.0A | Littelfuse I... | -- | 1000 | TVS DIODE 5V 9.2V DO214AC |
| SMA6L5.0A | Littelfuse I... | -- | 1000 | TVS DIODE 5V 9.2V DO221AC |
| SMA6L18A | Littelfuse I... | 0.12 $ | 1000 | TVS DIODE 18V 29.2V DO221... |
| SMA6J26AHM3/5A | Vishay Semic... | 0.0 $ | 1000 | TVS DIODE 26V 40.9V DO214... |
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| SMA6T12AY | STMicroelect... | 0.15 $ | 1000 | TVS DIODE 10.2V 21.7V SMA |
| SMA6J20A-TR | STMicroelect... | 0.12 $ | 1000 | TVS DIODE 20V 36.8V SMA |
| SMA6J15A-E3/61 | Vishay Semic... | -- | 1000 | TVS DIODE 15V 27.7V DO214... |
| SMA6J18AHM3/5A | Vishay Semic... | 0.0 $ | 1000 | TVS DIODE 18V 28.3V DO214... |
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| SMA6J51A | Littelfuse I... | 0.1 $ | 1000 | TVS DIODES SMA 600W TR |
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SMA6080 Datasheet/PDF