SMB8J6.5CHE3/5B Allicdata Electronics
Allicdata Part #:

SMB8J6.5CHE3/5B-ND

Manufacturer Part#:

SMB8J6.5CHE3/5B

Price: $ 0.00
Product Category:

Circuit Protection

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: TVS DIODE 6.5V 12.3V DO214AA
More Detail: N/A
DataSheet: SMB8J6.5CHE3/5B datasheetSMB8J6.5CHE3/5B Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Current - Peak Pulse (10/1000µs): 65A
Base Part Number: SMB8J
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: Automotive
Power Line Protection: No
Power - Peak Pulse: 800W
Series: Automotive, AEC-Q101, TransZorb®
Voltage - Clamping (Max) @ Ipp: 12.3V
Voltage - Breakdown (Min): 7.22V
Voltage - Reverse Standoff (Typ): 6.5V
Bidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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Transient voltage suppressor (TVS) diodes are an important type of protection device used to protect semiconductor components and circuits from high-voltage transient events, such as lightning strikes. The SMB8J6.5CHE3/5B is a unidirectional TVS diode designed for this application. This article will discuss the application field and working principle of the SMB8J6.5CHE3/5B.

The SMB8J6.5CHE3/5B is designed for high-speed telecommunication, data and signal lines protection applications. It is ideal for use in Ethernet ports, RS232, 422, and 485 interfaces, telecommunications equipment and power hubs. The device has a low-voltage turn-on time of 2.2ns, an off-state voltage of 6.5V and an on-state voltage of 5V, and is rated up to 60A in surge current. The breakdown voltage range is between 5.9V and 7.6V, and the capacitance range is between 5 to 6 pF.

The SMB8J6.5CHE3/5B operates using the principle of avalanche breakdown, wherein the voltage applied to the junction of the two diodes exceeds the reverse breakdown voltage, resulting in an abrupt increase of current through the diode as it switches to its “on” state. The avalanche breakdown effect causes the current and voltage to have a negative differential resistance, which helps to limit the voltage across the diode.

When the voltage between the device’s anode and cathode reaches the breakdown voltage, the device switches to its “on” state in less than 2.2ns. As soon as the voltage between the anode and cathode is reduced below the device’s breakdown voltage, the device will switch to its “off” state, dissipating all the stored energy in the form of heat. The device can then be used to protect against subsequent high-voltage surges.

The SMB8J6.5CHE3/5B can also be used as an ESD (electrostatic discharge) protection device. It will keep the circuit protected from ESD transients with a discharge current of up to 200A. This makes it ideal for use in applications where ESD protection is needed.

The SMB8J6.5CHE3/5B is a popular device for use in telecommunication, data and signal protection. Its low capacitance and low-voltage turn-on time make it an ideal choice for protection against high-voltage transients and ESD events. It can be easily integrated into a variety of circuits and systems, providing effective protection in a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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