SMBZ5944B-E3/5B

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SMBZ5944B-E3/5B diode is a Zener diode used to regulate the voltage in applications. This diode is designed to provide a stable voltage while clamping any excessive voltage. It can be used in a variety of circuits, from low-voltage switching to high-voltage AC power protection. It is also used for a wide range of current sensing applications such as AC and DC motor feedback. This diode has a reverse leak-age current that is very low and therefore, it is a good candidate for applications where low current leakage is desirable. This diode can be used to protect sensitive systems from exposure to transients that may otherwise damage the system.

The SMBZ5944B-E3/5B diode is constructed in the form of a two-terminal metal-oxide-semiconductor (MOS) device. The device is constructed using two layers of silicon on one surface and a metal gate on the other. The device is also constructed with an integrated feedback resistor that provides adjustment of the leakage current. The gate is connected to a reference voltage, which controls the breakdown voltage of the device. The breakdown voltage can be adjusted by adjusting the reference voltage. The device also features a high reverse breakdown voltage of up to 5.0 volts and a reverse leakage current of 0.2 mA max.

The main application field for the SMBZ5944B-E3/5B diode is voltage regulation and voltage clamping. It can be used in a variety of circuits, such as low-voltage switching, high-voltage AC power protection, AC and DC motor feedback and current sensing applications. It serves as an effective means to protect sensitive systems from exposure to potentially damaging transients. It is also useful in applications that require low current leakage.

The working principle of the SMBZ5944B-E3/5B diode is relatively simple. When the voltage applied to the device\'s gate exceeds the breakdown voltage of the device, the resulting current flow across the device creates a high reverse breakdown voltage. This creates a voltage clamping effect which is efficiently used for voltage regulation and voltage clamping applications. The gate is also connected to a reference voltage, which can be adjusted to modify the breakdown voltage of the device. By adjusting the reference voltage, the breakdown voltage of the device can be adjusted to provide protection from transients.

In conclusion, the SMBZ5944B-E3/5B diode is an ideal solution for applications requiring low-voltage switching, high-voltage power protection, and AC/DC motor feedback and current sensing. Its two-terminal MOS construction and integrated feedback resistor allow for adjustable breakdown voltages and low leakage current. Its high reverse breakdown voltage of up to 5.0 volts and low reverse leakage current of 0.2 mA max provide the desired performance in a wide range of applications. With its versatile design, the SMBZ5944B-E3/5B diode is a great choice for voltage regulation and voltage clamping.

The specific data is subject to PDF, and the above content is for reference