SMCJ11

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TVS (Transient Voltage Suppressor) diodes are an important type of electronic component for the protection of sensitive electronic circuits. A commonly used TVS diode is the SMCJ11 (small-signal low capacitance unidirectional transient voltage suppressor). This diode is made with a unique structure and is capable of providing protection from transient overvoltages for low power circuits.

Applications

SMCJ11 diodes are designed to protect low power digital and analog circuits from electrostatic discharge (ESD) and other transient overvoltages. They are suitable for use in cellular phone and other handheld portable communication equipment, telecom access lines, onboard and PC-board applications. SMCJ11 diodes can also be used in motor control circuits, LCD panels, and LED lighting circuits.

Structures and Working Principle

The TVS diode is constructed on a low voltage silicon substrate. It has a PN junction surrounded by an N-type diffused layer that serves as an ion implantation window. The PN junction acts as the zener diode, blocking the reverse current, and the N-type diffused layer acts as an avalanche breakdown diode. When a large surge of voltage (transient overvoltage) is applied to the diode, the PN junction breaks down and the voltage is diverted across the N-type diffused area which creates an avalanche build-up of electrons. This is what provides the protection from the transient overvoltage.

When the transient is gone, the PN junction is re-established and the ion avalanche dissipates. Thus, the TVS diode can protect low power circuits from lightning and other transient overvoltages without having to rely on the power supply to trip the circuit.

SMCJ11 Characteristics

The SMCJ11 diode has a low capacitance (< 1 pF) which is excellent for high-speed data lines. The operating voltage range is from 5.0–170 volts. It can support surge currents up to 24 A (1ms pulse). The diode can also support reverse leakage currents of up to 50 µA. The temperature range for the SMCJ11 is from -55°C to 175°C.

Conclusion

The SMCJ11 is a versatile TVS diode capable of providing transient overvoltage protection for a variety of low power applications. It is constructed with a low voltage PN junction and an N-type diffused layer that act as the zener and avalanche breakdown diodes, respectively. The SMCJ11 has low capacitance, a wide voltage range, and high surge and reverse leakage current capabilities. All these features make it an ideal choice for protecting low power circuits from ESD and other transients.

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