SMCJ28CAE3/TR13

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The SMCJ28CAE3/TR13 is a Transient Voltage Suppression Diode (TVS) designed for protection of sensitive electrical components from transients caused by lightning, electrostatic discharges and other voltage spikes. As a multi-stripe protection device, the SMCJ28CAE3/TR13 provides increased breakdown voltage, improved power handling capabilities, superior ESD protection, and superior transient overvoltage protection. It also includes a built-in series resistor to minimize the energy transferred to the protected circuitry.

The SMCJ28CAE3/TR13 is made up of two silicon diodes that are designed to reduce the chances of secondary breakdown at a given voltage. This ensures that the device is able to withstand high voltages over long periods of time. The device also features a reverse leakage current block that prevents the leakage of current when in reverse bias, further protecting the device. The device is designed to operate over the temperature range of -55° C to +150° C, making it suitable for high temperature applications.

In order to ensure that the device can withstand long time transient spike voltages, the device is manufactured using an avalanche effect, which results in the diode being able to switch state quickly and operate safely for short-term voltage spikes. This process happens when the voltage reaches the breakdown voltage, causing a large current to flow through the diode. This current is then transferred to the connected circuit, thus providing overvoltage protection.

The SMCJ28CAE3/TR13 has many applications in the automotive, industrial, medical, telecommunications, and consumer electronics industries. It can be used to protect against voltage transients in wiring systems, circuit boards, and electronic devices. It is also suitable for use in voltage sensitive applications such as USB ports, HDMI ports, and other ports that require protection from electrical surges.

In summary, the SMCJ28CAE3/TR13 is a Transient Voltage Suppression Diode (TVS) designed to protect sensitive components from voltage transients caused by lightning, electrostatic discharge, and other voltage spikes. It is made up of two silicon diodes that provide increased breakdown voltage, improved power handling capabilities, superior ESD protection, and superior transient protection. This device is suitable for use in a wide range of applications in the automotive, industrial, medical, telecommunications, and consumer electronics industries due to its ability to quickly and safely switch state in the presence of transient voltages.

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