SMZJ3794A-E3/52

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SMZJ3794A-E3/52 is one of the diodes in the Zener single family. It is widely used in various industires and can be applied to both analog and digital circuits. The device includes two series-connected Zener diodes configured in one package with different breakdown voltages.

This device has a maximum peak pulse power dissipation of 180 W, a maximum continuous reverse voltage of 200 volts, and a total capacitance of less than 3 pF. It also has a maximum junction temperature of 145°C, a low forward voltage of 1.2V, and an operating temperature range of -55°C to 175°C.

In terms of application fields, SMZJ3794A-E3/52 is suitable for a wide range of uses, including in resistive and capacitive switching circuits, voltage referencing and clamping, and protection from power surges. It is well suited for applications in high frequency HF, microwave and ultra-high-speed circuits, as well as in optoelectronic detectors, power semiconductor circuits and radiation-resistant applications such as space-flight equipment.

The working principle of the SMZJ3794A-E3/52 Zener diode is relatively simple. When a voltage is applied to the device, the Zener diode will breakdown and begin to conduct. The device will then allow for the current to flow in both directions. This current flow allows for the device to regulate the output voltage by allowing the voltage to remain at a constant level.

The device works as a voltage regulator by allowing only a certain amount of current to flow through it. This way, the device is able to protect circuits from excessive current and maintain a constant voltage. Additionally, the device can be used to create voltage reference sources, as the device can provide more reliable voltage references than regular resistors.

In short, SMZJ3794A-E3/52 Zener single is a versatile device that can be used in a variety of applications. As it maintains a constant voltage output, it is well suited for use in analog and digital circuits and provides reliability and protection. It is a cost-effective device that can be used in both low and high frequency circuits, as well as power semiconductor, radiation-resistant, and optoelectronic applications.

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