Allicdata Part #: | SRF4427-ND |
Manufacturer Part#: |
SRF4427 |
Price: | $ 1.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | TRANS RF BIPO 1.5W 400MA 8SOIC |
More Detail: | RF Transistor NPN 18V 400mA 1.3GHz 1.5W Surface Mo... |
DataSheet: | SRF4427 Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.93158 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 18V |
Frequency - Transition: | 1.3GHz |
Noise Figure (dB Typ @ f): | -- |
Gain: | 17dB ~ 18dB |
Power - Max: | 1.5W |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 20 @ 150mA, 5V |
Current - Collector (Ic) (Max): | 400mA |
Operating Temperature: | -- |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
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The SRF4427 transistors is a bipolar junction transistor (BJT) with a radio frequency (RF) range. It primarily functions as an amplifier with a wide range of applications, especially for high frequency (HF) and ultra high frequency (UHF) models.
A BJT is composed of three sections: collector, base, and emitter. Its operation within RF signals is usually carried out in the common-emitter connection, where the current is sent to the collector and the output taken from the emitter. It works as a switch with a biasing voltage applied, opening and closing quickly depending on a given input signal.
In a BJT RF amplifier, a signal of desired frequency range is input and a uniform output is taken. Typical BJ resonant frequencies range from fifty to one thousand megahertz and they usually have cutoff frequencies ranging from five hundred to two thousand megahertz. The SRF4427 is able to deliver even higher frequencies, up to 2.7GHz being operational.
The SRF4427 includes several features able to block any considerable current between the collector and the emitter. Some of these features include: a high-bandwidth amplifier with a wide-range frequency up to 2.7GHz, wide gain of 17-20 dB and good linearity, and low voltage drive requirement.
The SRF4427 is a NPN type BJT and its maximum Collector-Emitter voltage/Recovery Voltage (VCEO/VCR) and Maximum Collector-Emitter voltage (VCEXMAX) are about 240V and 200V respectively. Also, the transitions applied to the device can vary from -55°C to +225°C. The device has a power dissipation from 130mW to 500mW, depending on the temperature.
The working principle of the SRF4427 BJT is classic and is based on two basic mechanisms: charge storage and current injects. The charge storage mechanism inverts the device by storing the electrons either in the base or the collector. The current injector principle works by injecting the current into the base of the BJT, thus, increasing the current flow through the collector and emitter. The combined action of both, charge storage and current injector, amplifies the input signal, which is the output of the BJT.
The SRF4427 is a versatile device, with many applications. It is commonly used in radio frequency (RF) amplifiers, oscillators, bias circuits, band-pass filters, and low noise amplifiers circuits. It works well in medium to high power level amplifiers and is suitable for high frequency (HF) and ultra-high frequency (UHF) applications. It is also used in five hundred to two thousand megahertz non-resonator RF circuits. Due to its features and performances the SRF4427 has been used for decades and it is still one of the most commonly used BJT devices available in the market.
The specific data is subject to PDF, and the above content is for reference
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