SS5P6HM3_A/H

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The SS5P6HM3_A/H is a fast-recovery diode developed by SSDI.

It is designed to be used in a range of applications, such as high-frequency switching, rectification, energy storage, and more. It is ideal for use in voltage sensitive electronic applications, as it can operate with a maximum forward current rating of 5.75 A and reverse voltage rating of 600 V. It is also generally used in applications such as railroads, transformers, household appliances, automotive inverters, and industrial power supplies.

The SS5P6HM3_A/H is constructed using the company’s proprietary PN gap junction process. This process allows for the rapid onset of avalanche breakdown, resulting in fast recovery when the forward current is interrupted. The PN gap junction process also produces a freer flow of electrons, which reduces the slew rate of the device and increases the current-carrying capacity of the device by a significant amount.

The SS5P6HM3_A/H also has a fast switching speed and a high surge voltage rating. With a maximum forward voltage of 5.75 V, the diode is capable of handling a relatively high surge voltage. Additionally, its fast switching speed allows for rapid switching of current without causing major fluctuations in voltage levels.

Other features of the SS5P6HM3_A/H include low junction temperature, low thermal resistance, and low reverse recovery time. The low junction temperature of the diode prevents excessive heat buildup, which is often a problem in high frequency applications. The low thermal resistance also helps to dissipate heat, ensuring that the diode operates at optimum temperatures. Additionally, the low reverse recovery time helps to minimize power losses resulting from the diode’s operation.

In summary, the SS5P6HM3_A/H is a fast-recovery diode ideal for a number of electronic applications, such as high-frequency switching, rectification, and energy storage. Its features, including high surge voltage rating, fast switching speed, low junction temperature, low thermal resistance, and low reverse recovery time, make it suitable for use with sensitive electronic components. With its PN gap junction process, the diode produces a freer flow of electrons, allowing for a higher current-carrying capacity and a quicker response time when forward current is interrupted.

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