SSM2212RZ-R7 Discrete Semiconductor Products |
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Allicdata Part #: | SSM2212RZ-R7TR-ND |
Manufacturer Part#: |
SSM2212RZ-R7 |
Price: | $ 2.93 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Analog Devices Inc. |
Short Description: | TRANS 2NPN 40V 0.02A 8SOIC |
More Detail: | Bipolar (BJT) Transistor Array 2 NPN (Dual) Matche... |
DataSheet: | SSM2212RZ-R7 Datasheet/PDF |
Quantity: | 2000 |
1000 +: | $ 2.67015 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 2 NPN (Dual) Matched Pair |
Current - Collector (Ic) (Max): | 20mA |
Voltage - Collector Emitter Breakdown (Max): | 40V |
Vce Saturation (Max) @ Ib, Ic: | 200mV @ 100µA, 1mA |
Current - Collector Cutoff (Max): | 500pA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | -- |
Power - Max: | -- |
Frequency - Transition: | 200MHz |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOIC |
Base Part Number: | SSM2212 |
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The SSM2212RZ-R7 is an NPN monolithic quadruple diffusion-input, base resistor-equipped, monolithic complementary transistor array. It is one of the most popular transistor arrays available, and is classified under Transistors - Bipolar (BJT) Arrays. This type of device can offer benefits such as lower power consumption, improved switching times, and increased circuit efficiency.
The SSM2212RZ-R7 comes with a wide variety of features including NPN balistic compensation, designed for high-speed applications, and thermal compensation for temperature stability. It is also designed for balanced output and wide bandwidth, and can provide input current limiters for improved performance and reliability. With its large transconductance of 2.0 mV/V, the SSM2212RZ-R7 can handle up to 20A of peak load current and has an operating frequency of up to 3GHz.
The SSM2212RZ-R7 application field covers a wide range of applications, including power amplifiers, low-frequency amplifiers, and analog signal processing. It is often used as a building block in modern transistor technology, because it can provide the functionality of four transistors in a single package. The SSM2212RZ-R7 can also be used in high frequency systems, such as mobile phones, satellite radios, and wireless LAN cards, due to its inherent high-speed characteristics.
The SSM2212RZ-R7 transistors work by using a base current to generate a voltage between an emitter and collector. This voltage then allows current to flow from the collector to the emitter, creating an output signal. The SSM2212RZ-R7 can also be used as an amplifier, using the differential input to its gain and output impedance. This allows the user to increase the amount of power available for the desired application or feature.
The SSM2212RZ-R7 can be used in a variety of ways depending on the application. It can be used as a single transistor array, as a matched pair in parallel, as a dual transistor array, or even as a quadruple transistor array. It is important to consider the features and performance characteristics of each application when deciding what type of transistor array to use in order to meet the desired specifications and performance goals.
In conclusion, the SSM2212RZ-R7 is an important component in many transistor designs and applications. With its wide range of features, it is suitable for a variety of high-speed and low-power applications. Its high voltage and current ratings, along with its advantages in thermal stability and low power consumption, make it a popular choice for many designs. With its large transconductance and various other capabilities, the SSM2212RZ-R7 is sure to be an asset to any design.
The specific data is subject to PDF, and the above content is for reference
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