STK17TA8-RF25ITR Allicdata Electronics
Allicdata Part #:

STK17TA8-RF25ITR-ND

Manufacturer Part#:

STK17TA8-RF25ITR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC NVSRAM 1M PARALLEL 48SSOP
More Detail: NVSRAM (Non-Volatile SRAM) Memory IC 1Mb (128K x 8...
DataSheet: STK17TA8-RF25ITR datasheetSTK17TA8-RF25ITR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 1Mb (128K x 8)
Write Cycle Time - Word, Page: 25ns
Access Time: 25ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Supplier Device Package: 48-SSOP
Base Part Number: STK17TA8
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Memory is a vital component of modern electronics, providing data storage and processing capacity for both everyday and high-end computing. Among the myriad of memory types available, one of the most robust, reliable and versatile is the STK17TA8-RF25ITR memory, a type of static random access memory (SRAM). It is well-suited to applications requiring robust data storage and fast navigation, such as industrial, automotive and telecommunications.

The STK17TA8-RF25ITR memory module is comprised of a single IC, with each IC having 256K bits of storage capacity. The chip is organized into a 256-bit x 16-bit array, making it ideal for larger datasets requiring more granular control and greater visibility into the data. The module is designed to provide up to 32-Mbits of data storage and its wide temperature range makes it suitable for a broad range of applications.

The STK17TA8-RF25ITR offers fast data access times, allowing for real-time processing of data as it is transferred across multiple systems. It also offers considerable write endurance, meaning that data stored on the module is unlikely to degrade over time. Additionally, the module is resistant to interference from both electrostatic discharge (ESD) and radio frequency interference (RFI), both of which can cause severe performance issues or even complete failure of a memory module.

The STK17TA8-RF25ITR\'s working principle is relatively straightforward. When a read request is issued, the module\'s based logic circuits activate the address and data decoders, which then fetch the requested data from the memory array. If a write request is issued, data is written directly to the array as per the address specified in the request. Data is then stored in the array until a subsequent read or write operation is executed.

The STK17TA8-RF25ITR memory module is becoming increasingly popular due to its robust storage capacity and ability to operate in a wide variety of applications, including industrial, automotive and telecommunications systems. Its resistance to ESD and RFI is particularly beneficial for mission-critical systems. Additionally, its fast data retrieval and write speeds make it ideal for real-time applications such as video streaming or voice recognition.

The STK17TA8-RF25ITR memory module is just one example of SRAM, with other applications and sizes available from various manufacturers. While the module may not be suitable for all applications, its reliability and compatibility make it a great choice for many industrial, automotive and telecommunications systems.

The specific data is subject to PDF, and the above content is for reference

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