SY100EP16VKG-TR

SY100EP16VKG-TR Application Field and Working Principle

Logic - Specialty Logic

The SY100EP16vKG-TR is an Enhanced Differential Edge-Enhanced Advanced Input/Output (I/O) static random-access memory (SRAM) produced by IDT (Integrated Device Technology), Inc., a leading manufacturer in developing integrated circuits used across various fields.The device is built on a 0.5mm pitch fine-pitch ball grid array (FGA) package, a form factor particularly useful for dense applications with limited space.The SY100EP16vKG-TR is designed for the demands of a diverse range of applications such as computer systems, consumer electronics, gaming, and network applications. Utilizing the device\'s increased operating speeds of up to 100 MHz, and optimized low power consumption, the SY100EP16vKG-TR is well-suited for a wide array of applications.

Core Features

The SY100EP16vKG-TR contains 18Kb of SRAM, built on a 0.5mm pitch FGA package, and features an advanced, low-power, differential input/output (I/O) architecture. Additionally, the device has an increased operating speed of up to 100 MHz, enhanced power management features to reduce device power consumption and improve system performance, as well as a wide range of other features.

Core Architecture

The SY100EP16vKG-TR features a static random-access memory (SRAM) architecture which features a bank of memory cells that store a single bit of data. The data is accessed using two address signals, the row address and column address, which are sent from a central processing unit (CPU) or other processor through an I/O bus.Once the location of the data is identified, the memory cells in the right bank open and the data bit is read out through the output lines connected to the bank of SRAM cells. The operation of reading data from a chip is referred to as a “read cycle” while that writing data to a chip is referred to as a “write cycle.”The SY100EP16vKG-TR is designed to meet stringent requirements for operating speed and power efficiency. The device utilizes a differential I/O architecture in which input or output signals are sent as differential pairs. This provides much faster switching times than can be achieved with traditional single-ended I/O driver architectures.

Working Principle

The SY100EP16vKG-TR uses a static random-access memory (SRAM) architecture which stores data in a bank of memory cells. This data is accessed using two address signals, the row address and column address, which are sent from a central processing unit (CPU) or other processor via an I/O bus.Once the location of the data is identified, the memory cells in the right bank open up and the data bit is read out through the output lines connected to the bank of SRAM cells. The operation of reading data from a chip is referred to as a “read cycle” while that writing data to a chip is referred to as a “write cycle.”In addition, the SY100EP16vKG-TR utilizes a differential I/O architecture known as Edge-Enhanced Advanced Input/Output. This architecture allows for faster switching times than can be achieved with traditional single-ended I/O driver architectures, as well as reduced power consumption.When the SY100EP16vKG-TR is used as an output device, current is forced from the I/O output lines by two PMOS transistors, which constitute an inverter. This current is driven to the I/O output lines, providing power to both the edge-enhanced advanced I/O circuits and the input lines.When used as an input device, the SY100EP16vKG-TR utilizes edge-enhanced advanced I/O logic to detect the voltage level of the I/O input lines. When the voltage level on the input lines is greater than the threshold voltage, the latch is closed and the device latches the data bit which was stored in the SRAM. When the voltage level falls below the threshold voltage, the latch is opened, and the SRAM input data bit is no longer accessible.In conclusion, the SY100EP16vKG-TR is an advanced I/O static random-access memory (SRAM) device produced by IDT that is well-suited for a wide array of applications. The device has an increased operating speed of up to 100 MHz, enhanced power management features for reduced power consumption, and utilizes an advanced, low-power, differential input/output (I/O) architecture. The SY100EP16vKG-TR is designed to provide users with the best performance and power efficiency for a wide range of applications.