SZ-10NN40VL Discrete Semiconductor Products |
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Allicdata Part #: | SZ-10NN40VLTR-ND |
Manufacturer Part#: |
SZ-10NN40VL |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Sanken |
Short Description: | DIODE ZENER 38V 6W SZ10 |
More Detail: | Zener Diode 32V 6W ±5% Surface Mount SZ-10 |
DataSheet: | SZ-10NN40VL Datasheet/PDF |
Quantity: | 1000 |
Tolerance: | ±5% |
Power - Max: | 6W |
Current - Reverse Leakage @ Vr: | 10µA @ 32V |
Voltage - Forward (Vf) (Max) @ If: | 980mV @ 6A |
Operating Temperature: | -55°C ~ 175°C |
Mounting Type: | Surface Mount |
Package / Case: | Nonstandard SMD |
Supplier Device Package: | SZ-10 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 32V |
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Diodes-Zener-Single is a type of diode that is particularly useful in prevention of overvoltage. It consists of a single P-N junction, typically a heavily doped silicon-based junction, which enables it to limit the maximum current passing through it at higher voltages than regular diodes. Amongst this type of diode, SZ-10NN40VL stands out for its wide range of applications and its working principle. SZ-10NN40VL is a 40 volt Zener diode, used for protection against overvoltage. It has low power dissipation, typically 120mW, and this keeps the junction temperature cool to ensure an effective protection against overvoltage. This breakdown voltage is mainly dependent on the doping concentration within the P-N junction. The higher the doping concentration(or the higher the breakdown voltage) the more effective the protection will be. This makes it suitable for applications with high electromagnetic fields, such as industrial equipment. In terms of its working principle, it works in the same way as a standard diode, but with a lower forward voltage drop. This is due to the heavy doping which makes the reverse voltage greater than a standard diode. When the voltage applied to this diode approaches the breakdown voltage, electrons from the P-region can cross into the N-region and create an avalanche breakdown effect, where the electrons and holes collide radiating away the extra energy, resulting in a large current flow without any further increase in voltage. This removes the overvoltage polut and ensures the protection of the electronics.Apart from its protection against overvoltage, SZ-10NN40VL can also be used in designs which require current regulation. When the voltage applied to the diode is equal to the breakdown voltage, it can be used as a voltage regulator which can limit the current to a fixed value, enabling designers to create their own current regulation designs. Furthermore, SZ-10NN40VL can also be used in reverse bias protection applications. Here, it functions as a low-value resistor between the power source and the device. This protects the device from any excessive voltage in the power source, and it also reduces the reverse-bias leakage current.In conclusion, SZ-10NN40VL is a type of Zener Diode which is deeply appreciated for its wide range of applications and its effective protection against overvoltage. It is particularly useful in designs requiring current regulation and reverse bias protection, and its low power consumption helps to ensure effective protection.
The specific data is subject to PDF, and the above content is for reference
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