SZBZX84C24ET1G

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SZBZX84C24ET1G is a type of diode, specifically classified under the single zener section. It’s designed for operation in a variety of applications, and its diverse features enable it to perform reliably in various conditions. This article will look into the device’s range of uses, as well as its working principles.

Application Field of SZBZX84C24ET1G

The SZBZX84C24ET1G diode is characterized by its frequent use in commutation circuits. A commutation circuit is comprised of electro-mechanical and electronic elements, and its purpose is to facilitate a controlled transfer of power. As the circuit works to cycle through different stages of the power flow, it is essential that the components in it can handle the high frequency transitions present in the cycling process. As such, the SZBZX84C24ET1G diode provides the necessary protection and reliability in order to ensure continuous functioning of the power transfer circuit.

Moreover, the device is also used in voltage wave shaping circuits. Its features enable it to cast various types of shapes at different frequencies, and provide output waveforms that are proportionate to the voltage applied. This is useful in waveform generating and regulating devices, as it can help translate vibration levels from the input waveform into output waveforms. Furthermore, the characteristics of the SZBZX84C24ET1G allow it to handle a variety of wave forms from direct current sources, where it is required to have a high level of accuracy in wave shaping. In conclusion, the device is designed to be able to source current in amplitude limited waveforms for several circuit applications, effectively serving its purpose in a range of wave form generating and voltage regulating devices.

Working Principle of SZBZX84C24ET1G

Using the PN junction, the SZBZX84C24ET1G diode functions as a special type of diode, where the two elements combine to form a region called a depletion region. In this case, it operates as a zener breakdown channel. The channel is formed in such a way that it can increase its voltage by itself, providing a range of benefits such as higher output voltage and faster switching time.

When reversely connected, the voltage at the PN junction reaches a certain threshold, and once the voltage increases to exceed this barrier, the zener breakdown channel will be formed. The breakdown channel develops a uniform shallow valley from the input to the output, allowing current to exceed to a certain amount. The establishment of this valley will result in a voltage drop due to the formation of a resistance from the input to the output. This voltage drop is known as the zener voltage.

The SZBZX84C24ET1G is further equipped with an inherent capacitance which is able to store and discharge energy, thus providing a buffer to the PN junction to ensure continuous operation of the device in repetitive modes. This provides protection against pin to pin and diode to diode voltage breakdowns, and helps prevent current leakage. The capacitor will also discharge the stored energy when the power level drops, and the device is shut down.

In conclusion, the SZBZX84C24ET1G device is equipped with a PN junction in order to form a zener breakdown channel, providing a consistent voltage drop as a result of the zener voltage. Additionally, an inherent capacitance is included which helps store and discharge energy, allowing for protection against pin to pin and diode to diode voltage breakdowns. As such, the device is designed for operation in various applications, providing the necessary protection and reliability for operation in commutation circuits and wave shaping circuits.

The specific data is subject to PDF, and the above content is for reference