SZBZX84C4V3ET1G

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Zener diodes are single-junction, semiconductor devices which are characterized by a stable reverse breakdown voltage. SZBZX84C4V3ET1G is a type of Zener diode with reverse-breakdown voltage of 4.3V, easy to use and convenient. In this article, we will look into the applications and working principle of SZBZX84C4V3ET1G.

Applications of SZBZX84C4V3ET1G

SZBZX84C4V3ET1G is suitable for a variety of applications, the most common being voltage regulation. In voltage regulation, the diode is connected in reverse across a load, such that it functions as a voltage stabilizer. When the input voltage is greater than, or equal to, the reverse-breakdown voltage of the diode, the diode remains forward-biased and the voltage output across the load is constant. This ensures that the output voltage does not exceed the breakdown voltage of the diode, hence preventing the load from getting damaged or destroyed due to voltage surge. Furthermore, SZBZX84C4V3ET1G is also employed as a protection device in power systems to prevent the reverse flow of current.

Another important application of Zener diodes is in the field of wave shaping. When a voltage signal is applied to a diode, the diode is forward-biased until the signal amplitude crosses the Zener voltage. Once the signal amplitude reaches the Zener voltage, the diode switches to reverse-biased and stops the signal, acting as an electronic “clamp”. This property of diodes is used in many wave-shaping circuits to produce specific signal patterns such as sine waves, square waves etc.

Working Principle of SZBZX84C4V3ET1G

SZBZX84C4V3ET1G is a PN-junction diode, which comprises of two regions; N-region and P-region. When the diode is connected in forward-bias condition, the free electrons from the N-region move towards the positive terminal of the power supply and the holes in the P-region move towards the negative terminal, resulting in current flow through the diode. When a reverse voltage is applied to the diode, the reverse current is limited by a property known as the “reverse breakdown voltage”. This reverse breakdown voltage defines the “peak” in the I-V curve of the diode, which is the maximum voltage the diode can handle without getting damaged.

For SZBZX84C4V3ET1G, the reverse breakdown voltage is 4.3V, which is relatively low compared to other Zener diodes. This makes SZBZX84C4V3ET1G an ideal choice for applications requiring a stable, low-voltage output. In addition, the diode also has a minimum reverse current, known as the “knee” current, which is the minimum current needed to sustain the reverse-biased breakdown voltage of the diode. The knee current of SZBZX84C4V3ET1G is 0.595mA.

Apart from the above-mentioned properties, SZBZX84C4V3ET1G also has a high reverse leakage current, which is the current that flows through the diode when it is reverse-biased. This high leakage current also reduces power dissipation of the diode, thus making it well-suited for applications where low power dissipation is a priority.

Conclusion

In summary, SZBZX84C4V3ET1G is a type of single-junction Zener diode with a reverse-breakdown voltage of 4.3V and a relatively low knee current of 0.595mA. Its low breakdown voltage and high reverse leakage current makes it suitable for applications such as voltage regulation, wave-shaping, and protection from reverse current flow in power systems.

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