SZMMBZ5253BLT1G

Series:	Automotive, AEC-Q101
Packaging:	Tape & Reel (TR)
Part Status:	Active
Voltage - Zener (Nom) (Vz):	25V
Tolerance:	±5%
Power - Max:	225mW
Impedance (Max) (Zzt):	35 Ohms
Current - Reverse Leakage @ Vr:	100nA @ 19V
Voltage - Forward (Vf) (Max) @ If:	900mV @ 10mA
Operating Temperature:	-65°C ~ 150°C
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3 (TO-236)
Base Part Number:	MMBZ5253B

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SZMMBZ5253BLT1G Application Field and Working PrincipleThe SZMMBZ5253BLT1G is a single zener diode developed by Vishay Intertechnology. This zener diode offers a wide range of benefits, primarily in the areas of power management, electrical noise suppression, and overvoltage suppression. It is designed for use in many different applications and for a range of voltage ranges. This article will explore the SZMMBZ5253BLT1G’s application field and its working principle.The SZMMBZ5253BLT1G\'s primary purpose is to provide overvoltage protection by operating as a reverse-biased zener diode. It is capable of conducting high levels of current when reverse-biased and is typically used in designs that need to control the voltage within a certain voltage range. This device is also popular in the design of power supplies and load distribution systems, as it is capable of withstanding large amounts of power, while still protecting the load from power surges.The SZMMBZ5253BLT1G is designed to provide overvoltage protection for loads and devices when used in applications that require reverse-biased operation. In these applications, the PN junction between the zener diode and the anode forms a semi-conductor that is reverse-biased, allowing current to pass through the junction and creating a voltage limiting effect. This voltage limiting range usually ranges from 7.5V to 12V. The schematic diagram below illustrates the SZMMBZ5253BLT1G\'s operation in a power supply design.The SZMMBZ5253BLT1G can also be used in applications that require current overshoot protection. When the device is reverse-biased, it will form an open-circuit voltage across the PN junction and limit the current that can pass through the junction. This voltage and current limiting effect provides additional protection to the load and prevents the possibility of a short-circuit of the power lines.The SZMMBZ5253BLT1G is also designed to provide protection against electrostatic discharge (ESD). It uses a zener barrier protection structure comprised of a zener diode and transient voltage suppressor (TVS) diode connected in parallel. When subjected to an ESD event, the zener diode operates as an avalanche breakdown diode, creating a large voltage drop and diverting current flow away from the load and into the TVS diode, which then absorbs the excess energy from the circuit.The SZMMBZ5253BLT1G is used in many different applications and is popular in the design of consumer electronics, power supplies, and power distribution systems. It provides excellent protection against overvoltage, current overshoot, and ESD, making it a reliable and efficient component in a wide range of applications.

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