SZMMSZ4680T1G Discrete Semiconductor Products |
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Allicdata Part #: | SZMMSZ4680T1GOSTR-ND |
Manufacturer Part#: |
SZMMSZ4680T1G |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE ZENER 2.2V 500MW SOD123 |
More Detail: | Zener Diode 2.2V 500mW Surface Mount SOD-123 |
DataSheet: | SZMMSZ4680T1G Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.05676 |
6000 +: | $ 0.05108 |
15000 +: | $ 0.04540 |
30000 +: | $ 0.04257 |
75000 +: | $ 0.03784 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 2.2V |
Tolerance: | -- |
Power - Max: | 500mW |
Current - Reverse Leakage @ Vr: | 4.5µA @ 1V |
Voltage - Forward (Vf) (Max) @ If: | 900mV @ 10mA |
Operating Temperature: | -55°C ~ 150°C |
Mounting Type: | Surface Mount |
Package / Case: | SOD-123 |
Supplier Device Package: | SOD-123 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The SZMMSZ4680T1G is a silicon planar type Zener diode which is used to provide a well defined reference voltage. It is a single diode and offers superior characteristics such as a stable voltage regulation, low power consumption and low temperature coefficient. This diode is well suited for various applications such as voltage regulators, DC to DC converters, battery management systems, power supplies and signal switching.
The SZMMSZ4680T1G utilizes a planar process which enables the construction of an efficient and highly reliable device. It features a special design of doping profiles, as well as a robust construction which enables it to withstand electrical and thermal shock. The diode has superior heat dissipation, resulting in a low forward voltage drop and low reverse current. The device is encapsulated in a SOD-123FL pacakge.
The SZMMSZ4680T1G offers a maximum Zener voltage of 4.7V, with a Zener impedance of 8.5Ω. It provides a low reverse leakage current of 300μA at 25°C and a maximum power dissipation of 350mW. The maximum operation temperature range is between -55°C to 150°C. It also features a capacitance of 2pF.
The working principle of the SZMMSZ4680T1G consists of a semiconductor junction where the Zener voltage is generated during current flow under reverse bias. When the reverse bias voltage reaches the Zener voltage, the diode will draw a high current which is then regulated by the Zener impedance. As the voltage difference between the junction terminals increases further, the diode will start to conduct more current and voltage will be limited to the Zener voltage level. As a result, the device will be able to maintain the output voltage despite variations in the input voltage.
So, the SZMMSZ4680T1G is an excellent choice for applications which require a well-defined reference voltage with low power dissipation and a low forward voltage drop. With its low temperature coefficient, it also provides excellent stability against temperature changes. This makes it suitable for power management circuits, DC to DC converters, voltage regulators and signal switching.
The specific data is subject to PDF, and the above content is for reference
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