SZMMSZ5225BT1G Allicdata Electronics
Allicdata Part #:

SZMMSZ5225BT1GOSTR-ND

Manufacturer Part#:

SZMMSZ5225BT1G

Price: $ 0.05
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: DIODE ZENER 3V 500MW SOD123
More Detail: Zener Diode 3V 500mW ±5% Surface Mount SOD-123
DataSheet: SZMMSZ5225BT1G datasheetSZMMSZ5225BT1G Datasheet/PDF
Quantity: 1000
3000 +: $ 0.04366
6000 +: $ 0.03929
15000 +: $ 0.03493
30000 +: $ 0.03275
75000 +: $ 0.02911
Stock 1000Can Ship Immediately
$ 0.05
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 3V
Tolerance: ±5%
Power - Max: 500mW
Impedance (Max) (Zzt): 29 Ohms
Current - Reverse Leakage @ Vr: 50µA @ 1V
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123
Base Part Number: MMSZ5225B
Description

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The SZMMSZ5225BT1G diode is classified as a Zener single diode which is used for various applications and has a specific working principle. It is a silicon epitaxial planar type blue LED, which can be used for in various applications with maximum reverse breakdown voltage at 25 V, forward voltage at 3 V and maximum forward current of 150 mA. The package of this diode is SOT626.

The major use of the SZMMSZ5225BT1G diode is in the electronics industry, such as in the communication, consumer electronics and automotive sectors. The diode is used for overvoltage protection, ESD protection for communication modules, switching power supplies and voltage reference applications. In the automotive industry, the diode is used for reversing lights, controlling the infotainment systems and to monitor the airbag deployment in vehicles. Additionally, it is also used as an indicator LED in some vehicles as well as in gadgets.

The working principle of the SZMMSZ5225BT1G diode is based on its Zener single diode properties. When the diode is forward biased, the current passes through it and the voltage applied is the same as the forward voltage of the diode. When the diode is reverse biased, the voltage applied across the diode is greater than the breakdown voltage of the diode. In such a situation, the diode breaks down and the current increases exponentially. As a result, voltage across the diode is dropped to the same as the reverse breakdown voltage which protects the other components from damage.

The SZMMSZ5225BT1G diode exhibits good capability for voltage clamping and transient suppression. It also has high reverse resistance and low leakage current, which makes it well suited for overvoltage protection applications. Moreover, due to its low forward and reverse current ratings, it is beneficial for high-temperature and low-power applications. Furthermore, the forward current is temperature and time dependent, which allows for more stable operation in temperature extremes, so the diode can be used for a wide range of applications.

The SZMMSZ5225BT1G diode is a reliable device which is used in various applications. It exhibits desirable characteristics such as high reverse breakdown voltage, low forward and reverse current ratings, and low leakage current, making it ideal for electronic protection. It also has good capability for voltage clamping and transient suppression, making it suitable for use in communication, consumer electronics and automotive applications.

The specific data is subject to PDF, and the above content is for reference

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