Allicdata Part #: | SZMMSZ5251ET1G-ND |
Manufacturer Part#: |
SZMMSZ5251ET1G |
Price: | $ 0.07 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE ZENER 22V 500MW SOD123 |
More Detail: | Zener Diode 22V 500mW ±5% Surface Mount SOD-123 |
DataSheet: | SZMMSZ5251ET1G Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.06132 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 22V |
Tolerance: | ±5% |
Power - Max: | 500mW |
Impedance (Max) (Zzt): | 29 Ohms |
Current - Reverse Leakage @ Vr: | 100nA @ 17V |
Voltage - Forward (Vf) (Max) @ If: | 900mV @ 10mA |
Operating Temperature: | -55°C ~ 150°C |
Mounting Type: | Surface Mount |
Package / Case: | SOD-123 |
Supplier Device Package: | SOD-123 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The SZMMSZ5251ET1G is a type of single zener diode specifically designed for use as a voltage-stabilizing device in a variety of applications. It is manufactured using a low-voltage epitaxial process, resulting in improved power dissipation and stability, making it an ideal choice for a broad range of applications.
The diode’s power dissipation is rated at 500 mW, making it well-suited for a range of commercial, industrial, and personal applications. Additionally, its maximum operating junction temperature is 150°C, allowing it to handle higher temperatures than other diodes.
The SZMMSZ5251ET1G’s reverse breakdown voltage is 5.2V, which allows it to act as a voltage regulator in applications requiring a nominal voltage close to 5.2V. The diode has a maximum reverse current leak of 1mA, which allows it to protect other components from excessive current. This makes the diode suitable for use in applications that require the device to protect or regulate voltages.
The SZMMSZ5251ET1G’s working principle is based on the fact that a reverse biased p-n junction diode can be used to regulate voltages. A reverse biased p-n junction diode will conduct a large amount of current when the voltage across it exceeds its reverse breakdown voltage. This allows the diode to act as a voltage regulator, as the current flow is limited by the diode’s maximum current rating.
The SZMMSZ5251ET1G is suitable for use in a variety of applications, such as in DC power supplies, computer power supplies, battery-powered devices, and in test equipment. The diode is also used in automotive applications, such as in engine control systems and in instrumentation.
Due to its low-voltage epitaxial construction, the SZMMSZ5251ET1G is able to handle higher temperatures than other types of diodes, making it a popular choice for industrial and automotive applications. Additionally, its reverse current leak is low, making it suitable for use in applications that require the device to protect or regulate voltages. This makes the SZMMSZ5251ET1G an ideal choice for a broad range of industrial, commercial, and automotive applications.
The specific data is subject to PDF, and the above content is for reference
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