T10B80B Circuit Protection

Series:	SIDACtor®
Packaging:	Bulk
Lead Free Status / RoHS Status:	--
Part Status:	Obsolete
Moisture Sensitivity Level (MSL):	--
Voltage - Breakover:	--
Voltage - Off State:	80V
Voltage - On State:	4V
Current - Peak Pulse (8/20µs):	250A
Current - Peak Pulse (10/1000µs):	100A
Current - Hold (Ih):	120mA
Number of Elements:	1
Capacitance:	60pF
Mounting Type:	Through Hole
Package / Case:	DO-201AD, Axial

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Introduction

Thyristors are considered to be the most versatile member of the mechanical switches family. This is because they can be used to control a wide range of electrical applications, including voltage, current, and power regulation. The term “Thyristor” is derived from the Greek words “thyristis” and “metal”, meaning “a pair of connected switches”. In this article, we will discuss the application field and working principle of T10B80B, a type of Thyristor.

Application Field of T10B80B

T10B80B is a three terminal bidirectional Thyristor designed for use in industrial power controls. The device offers sensitive gate drive control, low power loss, and low surge rating. The current limitation value of this device is 800 W. This makes it especially suitable for use in applications that require energy limiting such as motor control.The T10B80B Thyristor can also be used in high voltage and current applications. This is due to its high current-handling capability and robust performance. Furthermore, this device has a very low on-state voltage drop and a fast switching speed, making it ideal for applications such as DC to AC power converters or phase control circuits.

Working Principle of T10B80B

The T10B80B Thyristor is a three terminal miniature device designed to control electrical power. It consists of five layers of silicon, connected in series at the base. Two external gate connections are provided, a ground and a return bus for pulsing or actuation of the Thyristor.The operating principle of the T10B80B depends upon the current flowing through the device. When current flows through the device, a region of positive potential is created at the anode. At the same time, the external gate voltage also creates a potential at the gate region. This potential is necessary for the device to switch from the off-state into the on-state.Once the voltage across the thyristor reaches a certain threshold, the device will switch from the off-state into the on-state. This is known as the “breakdown voltage”. The device will continue to remain in the on-state until the current flow is reduced to zero. Once the current flow is reduced to zero, the device will switch back to the off-state and remain in that state until the cycle is repeated.

Conclusion

The T10B80B Thyristor is a three terminal device designed for applications requiring energy limiting and voltage regulation. This device is designed to provide stable switching and sensitive gate drive control. It is suitable for use in high voltage and current applications, such as motor control, DC to AC power converters, and phase control circuits. The working principle of the device depends upon the current flowing through it. Once the voltage reaches a certain threshold, the device will switch from the off-state into the on-state. When the current flow is reduced to zero, the device will switch back to the off-state.

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