T110C156J035AS

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Tantalum capacitors are a type of electrolytic capacitor developed in the 1950s which are recognized for their high capacitance values, low leakage rates, low equivalent series resistance (ESR), and long shelf-life. The primary application of the tantalum capacitor is for use in high frequency, high temperature, high-voltage, and other applications which require stable, long-term electrical performance. The T110C156J035AS is a common configuration of tantalum capacitor, which is a molded construction with two anodes connected to a common cathode. This type of capacitor offers excellent capacitance along with excellent moisture and heat resistance.

The T110C156J035AS consists of a tantalum-oxide-created electrical charge that is stored between two conductive plates. The charge in the T110C156J035AS is stored in the form of microscopic dielectric layers which act as an insulating barrier between the two conductive plates. The platinum anode off the T110C156J035AS is typically formed from the highest grade of pure platinum which is highly conductive. The cathode of the T110C156J035AS typically consists of manganese dioxide, a material that has an inherently high dielectric strength. The combination of manganese dioxide and platinum anode in the T110C156J035AS create an optimal medium for the formation of the charge.

The T110C156J035AS is most commonly used in high frequency, high temperature, and high-voltage applications. Its primary purpose is to decrease the resonant frequency in radio-frequency circuits and increase the high-frequency power efficiency and stability. The T110C156J035AS offers low equivalent series resistance (ESR) which allows it to reduce energy losses due to current flow. Additionally, the T110C156J035AS is designed to withstand high temperatures, making it ideal for use in high-powered electronics and industrial applications.

The primary working principle of the T110C156J035AS is based on the electrochemical process known as anodic oxidation, which is a process that occurs when two or more substances interact with each other causing a reaction. During the anodic oxidation process, the platinum anode on the T110C156J035AS creates an environment in which the dielectric material (manganese dioxide) can absorb and store electrical charge. This charge then creates a dielectric layer which acts as an insulating barrier that prevents current from passing between the two conductive plates.

The T110C156J035AS is an ideal choice for many high-powered electronic applications. Its low equivalent series resistance (ESR) ensures lower energy losses, as well as more stable electrical performance across a wide range of temperatures. Additionally, the T110C156J035AS offers excellent moisture and heat resistance, making it an effective choice for use in demanding environments where extreme temperatures and humidity conditions are present. In summary, the T110C156J035AS is an ideal choice for high frequency, high temperature, and high-voltage applications that require reliable electrical performance and an extended service life.

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