T1960N18TOFVTXPSA1 Allicdata Electronics
Allicdata Part #:

T1960N18TOFVTXPSA1-ND

Manufacturer Part#:

T1960N18TOFVTXPSA1

Price: $ 278.94
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: SCR MODULE 2200V 4100A DO200AD
More Detail: SCR Module 2.2kV 4100A Single Chassis Mount DO-200...
DataSheet: T1960N18TOFVTXPSA1 datasheetT1960N18TOFVTXPSA1 Datasheet/PDF
Quantity: 1000
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
1 +: $ 253.58100
Stock 1000Can Ship Immediately
$ 278.94
Specifications
Series: --
Part Status: Last Time Buy
Lead Free Status / RoHS Status: --
Structure: Single
Moisture Sensitivity Level (MSL): --
Number of SCRs, Diodes: 1 SCR
Voltage - Off State: 2.2kV
Current - On State (It (AV)) (Max): 1960A
Current - On State (It (RMS)) (Max): 4100A
Voltage - Gate Trigger (Vgt) (Max): 2.5V
Current - Gate Trigger (Igt) (Max): 300mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 40000A @ 50Hz
Current - Hold (Ih) (Max): 300mA
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: DO-200AD
Description

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Thyristors are semiconductor devices that are used in a wide range of applications. Thyristors are a type of solid-state device that utilises a four-layer diode structure to control the flow of current. The T1960N18TOFVTXPSA1 is a thyristor module that is suitable for high-voltage applications. This article will discuss the application field and working principle of the T1960N18TOFVTXPSA1.

Application Field of the T1960N18TOFVTXPSA1

The T1960N18TOFVTXPSA1 module is capable of switching up to 16kV, making it useful for applications in the industrial, automotive, and medical sectors. It is designed to be a heavy-duty, low-cost solution that is equally well suited for AC and DC applications. It is also designed to meet a wide range of power requirements, up to 1kW. It can operate in a variety of temperature ranges, including -40°C to +175°C, making it suitable for extreme temperature environments. This makes the T1960N18TOFVTXPSA1 a great choice for applications in industrial control, energy conversions, traction drives, and motor drives.

Working Principle of the T1960N18TOFVTXPSA1

The T1960N18TOFVTXPSA1 utilises a four-layer diode structure to control the current flow. The device consists of two parallel-connected thyristors, each composed of a four-layer diode structure. The two thyristors are connected in opposite directions, so that one thyristor conducts when the other is off. This allows for high switching speeds with no minimum load required. The four-layer diode structure of the thyristor consists of four PN junctions. The upper and lower junctions are connected together to form the anode while the two remaining junctions are connected together to form the cathode. The device is triggered into conduction when the anode is positively biased above the cathode. It can then be turned off by reversing the polarity or by applying a negative pulse to the anode.

The T1960N18TOFVTXPSA1 module has a number of advantages, such as its ability to operate in a variety of temperature ranges and its heavy-duty, low-cost design. It is suitable for a wide range of applications and is capable of switching up to 16kV. This makes the T1960N18TOFVTXPSA1 an attractive choice for industrial, automotive, and medical industries.

The specific data is subject to PDF, and the above content is for reference

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