T494B475M035AT Capacitors

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T494B475M035AT is a tantalum capacitor that belongs to the increasing family of tantalum capacitors. Tantalum capacitors are being used increasingly in many industries for their unique properties and advantages that they bring with them making them a preferred choice in many applications.

The T494B475M035AT capacitors are made from a Ta-doped tantalum pentoxide, which allows them to offer benefits that other capacitors may fail to provide. They are available in a wide range of dielectric thicknesses, ranging from 0.3mm to 0.08mm.

The T494B475M035AT has a wide range of applications, ranging from AC to DC circuits, embedded systems, and power modules, where it gives improved performance. It is also used in multi-layer circuits and RF circuits, where its performance improves significantly. Additionally, it finds application in automotive electronics, military and aerospace, telecommunications, and computing systems.

The major advantage of the T494B475M035AT lies in its superior electrical performance. It has a very low Equivalent Series Resistance (ESR) and offers excellent stability, with low impedance and low inductance owing to its unique capacitive design. It also makes use of two separate capacitors, connected in parallel, which improves its stability and reduces its total inductance.

The T494B475M035AT also has several other advantages like low leakage, excellent temperature stability and a high level of reliability. Its small size makes it an ideal choice in applications where board space is limited and it comes in a variety of shapes like axial, radial and SMD (Surface Mount Device). This allows it to work in conjunction with other components that also have limited space availability.

The working principle of the T494B475M035AT is fairly simple and makes use of a simple voltage applied across two terminals. This voltage is passed through a medium, which can either be a medium of air, or a dielectric material such as tantalum pentoxide. As the voltage is applied, electrons are attracted from both the positive and the negative terminals, to the charged particles of the dielectric material. The electrons then form a negatively charged layer on the surface of the dielectric material, while the positively charged particles form a positively charged layer.

A dielectric field is created between the two layers, with the positive layer attracting more electrons compared to the negative layer. This resulting field acts as a barrier between the positive and negative charges, which holds the charge and forms the capacitance. The capacitance and the amount of charge that is stored depend on the size and dielectric constant of the dielectric, and can be increased or decreased depending on the operating conditions and parameters.

T494B475M035AT capacitors offer many advantages, both in terms of their electrical performance and also for their smaller size, which makes them an ideal choice for many applications in modern electronics. With their wide range of applications, from AC to DC circuits, to embedded systems and power modules, the T494B475M035AT is a great addition to the world of tantalum capacitors.

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