T495D686K016ATE150 Allicdata Electronics
Allicdata Part #:

399-3889-2-ND

Manufacturer Part#:

T495D686K016ATE150

Price: $ 0.30
Product Category:

Capacitors

Manufacturer: KEMET
Short Description: CAP TANT 68UF 16V 10% 2917
More Detail: 68µF Molded Tantalum Capacitors 16V 2917 (7343 Met...
DataSheet: T495D686K016ATE150 datasheetT495D686K016ATE150 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
500 +: $ 0.27568
1000 +: $ 0.24324
2500 +: $ 0.22703
5000 +: $ 0.22394
Stock 1000Can Ship Immediately
$ 0.3
Specifications
Operating Temperature: -55°C ~ 125°C
Failure Rate: --
Features: General Purpose
Manufacturer Size Code: D
Lead Spacing: --
Height - Seated (Max): 0.122" (3.10mm)
Size / Dimension: 0.287" L x 0.169" W (7.30mm x 4.30mm)
Package / Case: 2917 (7343 Metric)
Mounting Type: Surface Mount
Lifetime @ Temp.: 2000 Hrs @ 85°C
Series: T495
ESR (Equivalent Series Resistance): 150 mOhm
Type: Molded
Voltage - Rated: 16V
Tolerance: ±10%
Capacitance: 68µF
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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Tantalum Capacitors

T495D686K016ATE150 is a type of tantalum capacitor. Tantalum capacitors are integral components in most electronic devices, and have vast applications in a variety of industries due to their compact size and relatively large capacitance. As a consequence, they can be found in many electronic circuits, including those powering hospital equipment, MRI scanners, consumer electronics, lithium-ion battery packs, and military hardware.

Applications

T495D686K016ATE150 capacitors are mainly used in industries where highly stable voltage sources and very small physical dimensions are required. They are suitable for use in pulse applications where high accuracy is essential. Capacitor capacitance can be maintained over a large temperature range from -55°C to 150°C, which makes it a highly versatile component for many different applications.

Tantalum capacitors are used for timer circuits, oscillators, signal processing, switching, signal processing, and low frequency filtering. They can also be used in decoupling applications for power supply conditioning circuits and as memory cells for microprocessors. In addition, tantalum capacitors are used in military or industrial equipment requiring long-term reliability or harsh environmental conditions.

Working Principle

Tantalum capacitors work on the principle of electrochemical double layer capacitance. This means that a very thin but high-dielectric-strength insulating layer is formed between two metal electrodes when a voltage is applied across them. This layer functions as a capacitive medium and is referred to as a ‘dielectric’.

The capacity of the capacitor depends on the thickness of the dielectric, which is determined by the structure of the electrodes and the dielectric material in between. The thicker the dielectric layer and the better the electrical connections between the two electrodes, the higher the capacitor’s capacitance.

Tantalum capacitors generally consist of a metallic oxide or capacitor dielectric sandwiched between two tantalum electrodes. The electrodes can be either anode or cathode type. The anode electrode is made of porous or sintered tantalum, while the cathode is generally a solid metallic plate. The dielectric material is often tantalum pentoxide.

The voltage across the capacitor causes charge to flow from one electrode to the other through the dielectric. This causes the capacitance to increase, which raises the voltage drop across the capacitor. This change in voltage is known as “charge-transfer”.

Conclusion

T495D686K016ATE150 capacitors are highly reliable and versatile components with vast applications in various industries. They are particularly useful for applications requiring high accuracy pulse and where long-term reliability or harsh environmental conditions are required. They operate on the principle of electrochemical double layer capacitance by forming a very thin but high-dielectric-strength insulating layer between two metal electrodes, and their capability varies with the thickness of the dielectric layer.

The specific data is subject to PDF, and the above content is for reference

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