T627082554DN

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Thyristors are semiconductor devices with four or more layers having alternate N and P-type layers. They have three terminals named Anode, Cathode, and Gate. A thyristor is also known as a silicon controlled rectifier (SCR). T627082554DN is a type of SCR.

Application fields of T627082554DN include controlling and protection system, light control system in street, generating energy, energy saving, motor. With over voltage, over current, and short circuit protection, T627082554DN is suitable for various kinds of industrial control systems. It can also used directly for detecting and recognizing signals and therefore is used in the voltage fluctuation detection fields.

The working principle of such SCR is based on a 4-layer semiconductor structure with anode, gate and cathode. The anode is positively charged and the cathode is negatively charged. When the gate is triggered, the anode and gate are connected through the internal P-N junction and the current passes through the device. This is when the SCR is working.

The T627082554DN SCR is a four-layer thyristor device with a reverse bias. It can withstand up to 800 volts and 600 Amps of current and has an on-state current rating of 96 Amps. The device is designed to protect devices from over-voltage, over-current, and short-circuit situations. It has a built-in temperature and time control device which ensures safe and reliable operation of the device.

The T627082554DN is designed with special double Emitter plants to improve its performance and provide improved current-sharing capability. This also helps to reduce the on-state voltage drop and improves its reliability. T627082554DN also has a built-in Amplifier stage to reduce internal noise, improve Noise immunity and temperature coefficient.

T627082554DN provides a robust solution when it comes to controlling current, protecting from over-voltage and over-current, and providing reliable operation of the system. The built-in Amplifier stage and improved temperature coefficient make it more reliable. Thanks to its four layer structure, it is capable of handling higher power levels and can be used in different industrial control systems.

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