T640N16TOFXPSA1 Discrete Semiconductor Products

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Thyristors are an important class of power electronics device with a wide range of applications such as power switches and actuators. The T640N16TOFXPSA1 is a special type of thyristor module developed by Fuji Semiconductor. It is designed for use in low power AC, DC and phase control applications like motor speed control, light dimmers and static switching.

The application field of the T640N16TOFXPSA1 is most commonly used in industrial, commercial, and consumer applications. It is capable of providing a low on-state voltage drop and low gate trigger current requirements. This thyristor module is suitable for use in AC and DC equipment, such as welding machines, refrigerator motors, switched power supplies, electric ovens, and many other general-purpose control applications.

The main advantages of the T640N16TOFXPSA1 are its low gate trigger current and low on-state voltage drop. In addition, it also offers a large current capacity which makes it ideal for power switching applications. It is also capable of operating with high dv/dt, low v/dt and low leakage current.

The working principle of the T640N16TOFXPSA1 is based on a highly integrated MOSFET transistor and a double-diffused junction thyristor structure. When the gate voltage is applied, the electrons from the gate are drawn into the drift layer, forming a conduction path between the two base regions of the transistor. This conduction path allows current to flow between the junction and the drain of the MOSFET. This allows the thyristor to remain in the on-state until the gate voltage is reduced to zero. Furthermore, the gate voltage controls the gate current in order to turn off the thyristor.

To summarize, the T640N16TOFXPSA1 is a parabolic thyristor module developed by Fuji Semiconductor primarily used in low power applications such as motor speed control, light dimming, static switching and other general-purpose control applications. It offers low gate trigger current, low on-state voltage drop and a large current capacity. It is based on a highly integrated MOSFET transistor and a double-diffused junction thyristor structure, and the gate voltage is used to control the gate current in order to turn off the thyristor.

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